国家/地区 韩国（7） 美国（7）
IPC部 H（8） C（2）
IPC大类 H01（8） C23（2）
IPC小类 H01L（7） C23C（2）
IPC H01L021/02（5） H01L029/45（4） H01L029/16（3）
C23C016/26（2） H01L021/285（2） H01L021/768（2）
H01L029/417（2） H01L029/66（2）
发明人 CHO Y（8）
公开年 2022（8）
申请年 2021（5）  2022（2） 
专利权人 SAMSUNG ELEC.（7）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Thin-film structure used in semiconductor element, comprises substrate, nanocrystalline graphene layer on substrate, and two-dimensional material layer on nanocrystalline graphene layer, where substrate is silicon, silicon dioxide, aluminum oxide, quartz, germanium, gallium nitride, aluminum nitride.

CHO Y, LEE Z, SHIN H, SONG S, SON S, KIM J, KWON S, LEE C, LEE C S, YONG K S, KIM J H, SONG S U, SHIN H J, YI J H, CHO Y C

Acetylene fluid supply package for use in fabricating a semiconductor device, has pressure vessel, porous filler in the pressure vessel, improved solvent within the porous filler, where solvent solubilizing with acetylene absorbed within the improved solvent, improved solvent is triethyl phosphate.

HAN Y, CHUNG W, CHO Y, KANE W S, SONG X, SINHA A K, CHO Y J

Semiconductor device comprises two-dimensional material layer between metal layer and semiconductor layer, and metal compound layer between two-dimensional material layer and semiconductor layer.

SHIN H, SHIN K, BYUN K, CHO Y, CHO Y C, BYUN K E, SHIN K W, SHIN H J

Patterning two-dimensional material layer comprises forming two-dimensional material layer in both first region and second region, and removing two-dimensional material layer from second region based on using physical removal method.

CHO Y, YOO M, SHIN H, KWON J, SEOL M, NGUYEN V L, SHIN H J, YOO M S, CHO Y C

Manufacturing method of supercapacitor, involves performing thermal drawing process to produce fibers having diameter less than specific diameter, and forming solid electrolyte polymer by impregnating fibers in liquid electrolyte.

CHOI S T, LEESEUNGMIN, CHO Y, HEO N H, IN J, DUONG Q B

Interconnect structure for use in electronic device, has graphene layer formed between semiconductor layer and metal layer, and conductive metal oxide layer provided between graphene and semiconductor layers and covering region.

CHOI T, CHO Y, LEE C, LEE E, SHIN K, SONG H, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, SONG H J, SHIN K W, LEE C S, CHO Y C, CHOI T J

Semiconductor device comprises metal layer, semiconductor layer electrically contacting metal layer, and two-dimensional material layer formed between metal layer and semiconductor layer.

SHIN H, BYUN K, CHO Y, CHO Y C, BYUN K E, SHIN H J