国家/地区 美国（14） 中国（4） 德国（3） 英国（3） 世界知识产权组织（3） 韩国（2）
IPC部 B（11） H（11） C（5）
IPC大类 H01（11） B82（8） B32（4）
C01（4） B01（2） C23（2）
IPC小类 H01L（10） B82Y（8） B32B（4）
C01B（4） C23C（2）
IPC H01L029/06（6） B82Y040/00（5） B82Y030/00（4）
H01L021/02（4） H01L029/16（4） H01L029/78（4）
B32B009/00（3） C01B031/04（3） H01L021/20（3）
H01L029/66（3） H01L029/775（3） B32B018/00（2）
B32B038/10（2） B82Y099/00（2） H01L029/10（2）
发明人 DIMITRAKOPOULOS C（14）
公开年 2012（4） 2015（3） 2013（2）
申请年 2012（3）  2014（3）  2011（2） 
专利权人 INT BUSINESS.（10） UNIV MASSACH.（4） KARLSRUHE IN.（2） TAIWAN BLUES.（2）

Making article involves orienting first graphene layer at first interlayer twist angle with respect to second graphene layer, bonding, orienting third graphene layer at second interlayer twist angle and bonding third layer to second layer.

DIMITRAKOPOULOS C, MAROUDAS D, MUNIZ A R, GASKILL D K

Microfluidic device for X-ray scattering or diffraction, comprises a top layer comprising top support layer and top layer(s) of graphene, a bottom layer comprising bottom support layer and bottom layer(s) of graphene, and a middle layer.

SUI S, WANG Y, DIMITRAKOPOULOS C, PERRY S L

Sequential exfoliation of graphite for production of graphene flakes involves creating suspension of graphitic material in liquid, treating suspension in flow treatment, and centrifuging suspension to create supernatant and sediment.

WINTER H H, DIMITRAKOPOULOS C

Multi-layer graphene article i.e. large-area reinforced multi-layer graphene sheet, for ballistic protection of airplane parts, has graphene layer oriented at twist angle with respect to another graphene layer and bonded by covalent bonds.

DIMITRAKOPOULOS C, MAROUDAS D, MUNIZ A R, GASKILL D K

Method for forming silicon-carbon alloy structure, involves removing horizontal portion of alloy structure, and converting set of contiguous exposed surface portions of silicon-carbon alloy fin into graphene layer by anneal process.

CHU J O, DIMITRAKOPOULOS C, HARLEY E C, HOLT J R, MCARDLE T J, STOKER M W

Tamper resistance identification method for preventing copycat products, involves forming unique identification code based on respective temperatures or voltages from graphene resistors during powered state.

DIMITRAKOPOULOS C, PFEIFFER D, PLOUCHART J, SMITH J T

Carbon nanotube semiconductor device, has graphene electrode formed on surface of substrate such that electrically insulating portion is interposed between bulk portion of substrate and graphene electrode.

AVOURIS P, DIMITRAKOPOULOS C, FARMER D B, STEINER M B, ENGEL M, KRUPKE R, LIN Y

Carbon nanotube manufacturing method e.g. for nanotube-based transistor, involves aligning carbon nanotubes between graphene electrodes in direction parallel with electric field generated across graphene electrodes.

AVOURIS P, DIMITRAKOPOULOS C, FARMER D B, STEINER M B, ENGEL M, KRUPKE R, LIN Y

Interconnect structure for integrated microelectronic circuit, has graphene cap which is provided with edges that are vertically coincident with edges of copper structure.

BONILLA G, DIMITRAKOPOULOS C D, GRILL A, HANNON J B, LIN Q, NEUMAYER D A, OIDA S, OTT J A, PFEIFFER D, DIMITRAKOPOULOS C, HANNON J, NEUMAYER D, OTT J, DIMITRAKO P C D, GREER A

Semiconductor structure for semiconductor device, has substrate, graphene layer and double layer gate dielectric having alternate lamination of silicon nitride layer and hafnium oxide layer.

DIMITRAKOPOULOS C D, FARMER D B, GRILL A, LIN Y, NEUMAYER D A, PFEIFFER D, ZHU W, DIMITRAKOPOULOS C