国家/地区 中国（9）
IPC部 H（5） C（4）
IPC大类 H01（5） C01（3）
IPC小类 H01L（5） C01B（3） H01Q（2）
IPC C01B031/04（2） H01L027/144（2） H01Q001/22（2）
发明人 HE Z（9）
公开年 2013（9）
申请年 2013（9） 
专利权人 CHINA ELECTR.（5） 13TH RES INS.（2） HE Z（2）

Antenna integrated PIN junction graphene terahertz detector has preset ohmic contact electrode and specific ohmic contact electrode that are arranged on P-region and N-region of graphene PIN junction.

FENG Z, SONG X, WANG J, WEI C, XING D, ZHANG L, ZHANG X, YANG D, LIANG S, HE Z

Preparation of graphene oxide involves mixing graphite raw material and oxidant by mechanical action and oxidation reaction.

HE L, HE Z, LI L, YUAN X, ZHOU C

Manufacture of modified electrode for simultaneous determination of concentrations of catechol and hydroquinone, involves cleaning glassy carbon electrode, polishing using graphene-graphene oxide nanocomposite and drying.

LU X, ZHOU X, HE Z, LIAN X

Antenna integrated graphite allylprodine positive-intrinsic-negative junction terahertz detector, has graphene positive-intrinsic-negative junction whose P-region and N-region are respectively provided with two ohmic contact electrodes.

WANG J, WEI C, XING D, YANG D, ZHANG L, ZHANG X, FENG Z, SONG X, LIANG S, HE Z

Preparing graphene oxide comprises mixing graphite, benzoyl peroxide, peroxyacetic acid/hydrogen peroxide in a vibration ball mill and milling, and fully reacting to obtain graphene oxide.

HE Z, ZHOU C

Method for manufacturing semiconductor device, involves forming grid medium layer between graphene-containing layer and exposed seed layer using photo resist as mask and forming gate metal on gate dielectric medium to remove photo-resist.

WEI C, LI J, LIU Q, FENG Z, WANG J, HE Z

Formation method of horizontal graphene PIN junction used in semiconductor device, involves removing corrosion transferring graphene on shielding layer and shielding layer, and obtaining horizontal graphene PIN junction.

WANG J, LI J, LIU Q, WEI C, FENG Z, HE Z

Method for forming horizontal graphene PN junction on thin film crystal of semiconductor device, involves preparing layer of graphite or graphene on silicon carbide substrate, and providing doped graphite alkene with n-type doped grapheme.

WANG J, LI J, LIU Q, WEI C, FENG Z, SONG X, HE Z

Manufacture of ionic liquid-modified graphene oxide-natural rubber vulcanized rubber involves preparing ionic liquid-modified graphene oxide, mixed with natural rubber, zinc oxide, antioxidant, curing agent and stearic acid and cured.

JIA H, XU J, TANG Y, XIONG X, LI F, WU T, WANG J, LIU P, ZHANG J, ZHANG X, HE Z, XU Z