国家/地区 韩国（6） 美国（5） 中国（2）
IPC部 H（5） C（4）
IPC大类 H01（5） C01（3） C23（2）
IPC小类 H01L（5） C01B（3） C23C（2）
H01B（2）
IPC C01B032/182（2） C01B032/186（2） C23C016/26（2）
H01B001/04（2） H01L021/02（2） H01L021/324（2）
发明人 KIM C（7）
公开年 2021（7）
申请年 2020（4）  2021（2） 
专利权人 SAMSUNG ELEC.（5）

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Conductive structure for single layer structure, has work function control layer that is configured to control work function of conductive structure, where work function control layer is bonded to the conductive material layer.

SHIN H, KIM S, BYUN K, LEE E, KIM C, LEE C

Display device in multimedia devices such as TV set, comprises upper layer structure that comprises dielectric constant control layer which controls sensing sensitivity of input sensor.

CHOI Y S, LEE J H, KIM C, JUNG J, JUNG J W, CUI Y, LEE J, JIN Z, ZHENG Z

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Method for forming graphene, involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate.

CHO Y, LEE C, KIM C, SHIN H, SHIN K, NGUYEN V L, SHIN K W, SHIN H J, LEE C S, CHO Y C

Electrochemical carbon dioxide reduction catalyst electrode for preparing electrochemical carbon dioxide reduction apparatus, and reducing electrochemical carbon dioxide, comprises carbon catalyst particles doped with heteroelement.

KOUN M B, HWANG Y J, OH H S, LEE W, WON D H, KI L D, KIM C

Forming thin film of transition metal dichalcogenide, comprises providing substrate in reaction chamber, depositing transition metal dichalcogenide thin film on the substrate, and injecting chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film.

KIM C, KIM S, BYUN K, SHIN H, SOHN A, JUNG J, KIM S W, BYUN K E, SHIN H J, SOHN A R, JUNG J H