国家/地区 韩国（13） 美国（7） 世界知识产权组织（5） 中国（2） 欧洲专利局（EPO）（2）
IPC部 H（10） B（4） G（4）
C（3）
IPC大类 H01（9） B01（2） C01（2）
C23（2） G06（2） H10（2）
IPC小类 H01L（5） H01M（3） B01D（2）
C01B（2） C23C（2） G06N（2）
IPC H01M004/62（3） H01L023/532（2） H01M004/133（2）
H01M004/134（2） H01M004/1393（2） H01M004/1395（2）
H01M004/36（2） H01M004/38（2） H01M004/587（2）
H01M010/0525（2） H01M010/0562（2）
发明人 KIM K（15）
公开年 2023（10） 2022（5）
申请年 2022（15）
专利权人 SAMSUNG ELEC.（5） LG ENERGY SO.（3） KOREA ADVANC.（2） UNIV SEOUL N.（2）

Electro-osmotic pump for electrode, includes membrane that allows fluid movement, and first electrode and second electrode provided on both sides of membrane, where first and second electrodes are formed of impermeable substrate material and electrode material coated and have one fluid pathway.

KANG J, KIM K, ZHU E, SHIN W, SHIN W S, ZHU E H, KIM K H, KANG J Y, HUA Z

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Cellulose paper electrode coated with graphene used for fine dust removal device, comprises electrode plate composed of paper raw materials or cold-weather raw materials, graphene coated on cellulose paper electrode plate and binder.

KIM K, BAE J Y, BACK S, GHAFFARISAEIDABAD Y, GUPTA N K, KIM E

Semiconductor memory device e.g. phase-change RAM (PRAM), has first device layer that stores thermal energy if voltage is applied to second device layer.

LEE Y, KIM G, IN J H, KIM K M, JAEHYUN I, KIM K, HYUN L Y

Electrified fiber adsorbent used in electrified fiber adsorbent module, is formed from porous support containing adsorbent and conductive material.

KOH D Y, LEE Y H, JAMAL A, KIM K, JEONG J, KO D Y, AQIL J, KIM G N, JUNG J

Apparatus for recognizing reversed character using artificial intelligence, has artificial intelligence learning execution unit that recognizes reversed characters through artificial intelligence model learning using reversed character data set.

SOHN J H, KIM K, LEE A

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Integrated circuit device comprises substrate including word line trench and first recess adjacent to first side wall portion of inner wall of word line trench, and channel region on inner wall of word line trench, and channel region including first channel region and second channel region.

KIM K, JIN J

Semiconductor devices with improved electrical characteristics e.g. integrated circuits including metal-oxide-semiconductor field effect transistors, has substrate, first interlayer insulating layer on substrate, lower interconnection line in first insulating layer, and upper interconnection line.

JUNG E, YOO S, KIM R, KIM K, LEE J

Interconnect structure for use in electronic device, has graphene-metal barrier including graphene layers and metal particles on grain boundary of each graphene layer and between graphene layers, and conductive layer formed on barrier.

LEE S, SHIN H, KIM H, KIM K, SHIN K