国家/地区 韩国（10） 美国（2）
IPC部 H（5） C（4） B（3）
G（3）
IPC大类 H01（5） C01（4） B82（2）
G06（2）
IPC小类 C01B（4） H01L（3） G06F（2）
H01B（2）
IPC C01B031/04（3） C01B031/02（2） G06F003/041（2）
发明人 KIM K S（10）
公开年 2015（10）
申请年 2014（6）  2013（4） 
专利权人 HANWHA TECHW.（3） SAMSUNG TECH.（3） KOREA INST M.（2）

Composite laminate useful in membrane, catalyst, electrochemical active material and electrode, comprises graphene oxide, and metal chemically combined with graphene oxide which is inserted into the layer of layered graphene oxide.

LEE S M, KIM J H, LEE H J, KIM K, KIM K S

Method for manufacturing touch screen panel of display device, involves covering patterned graphene layer with protection film, where protection film comprises material with temperature greater than predetermined temperature.

KWON Y D, KIM K S, YOON S J

Curing graphene defect, comprises combining a heterogeneous material on a defected zone by repeatedly contacting a precursor gas containing heterogeneous material with graphene present on the defected zone containing structural defect.

LEE S M, DO VAN L, KIM S M, KIM K, KIM J H, JANG B, KIM K S, LEE H J

Production of doped graphene pattern during manufacture of pn-diode, involves supplying n-type carbon precursor on substrate, forming amorphous carbon pattern by irradiating electron beam or ion beam to precursor and heat-treating.

BAE D J, KIM K S, LEE I B

Method of fabricating graphene nano device, involves placing first metal mask pattern prepared in advance on first adhesive layer and heating layer to attach first metal mask pattern on substrate.

JEON E K, KANG H S, LIM K, PARK H J, KIM K, KIM J E, KIM Y S, HEO Y S, LIM K S, KIM K S

A graphene composition comprises graphene, acid, oxidizing agent and specific nitrogenous organic compound.

KWON Y D, KIM K S, KIM K, KWON Y

Method for manufacturing thermoelectric device, involves contacting the lower electrode to the upper thermal pattern, and forming the lower graphene pattern on a lower substrate.

GUIM H U, KIM K S, PARK S J, NAM J T

Encapsulating material for organic light-emitting diode, is iron-nickel alloy encapsulating material consisting of iron-nickel alloy film comprising iron, nickel and graphene.

KIM J Y, KIM K S, YANG H S, CHOI J H, LEE J K

Method for manufacturing electronic device with graphene layer, involves transferring synthesized graphene layer on surface-treated base substrate, where base substrate is heat-treated, and transferred graphene layer is patterned.

KWON Y D, KIM K S

Panel e.g. transparent display panel, has active region which is formed of graphene and inactive region that is formed of metal to cover active region.

PARK C H, CHO S M, KIM K S