国家/地区 韩国（19） 美国（9） 世界知识产权组织（7） 中国（3） 欧洲专利局（EPO）（3）
IPC部 H（16） C（10） B（7）
G（2）
IPC大类 H01（15） C01（8） B82（6）
C09（3） B01（2） B32（2）
B41（2）
IPC小类 H01L（11） C01B（8） B82B（5）
H01B（5） B01J（2） B32B（2）
B41M（2） B82Y（2） C09D（2）
IPC C01B031/02（5） B82B001/00（3） C01B031/04（3）
H01L031/028（3） B32B009/00（2） B82B003/00（2）
H01B001/04（2） H01B005/14（2） H01L029/16（2）
H01L029/786（2） H01L031/0224（2） H01L031/042（2）
发明人 KIM S（20）
公开年 2014（9） 2015（6） 2013（5）
申请年 2013（20）
专利权人 UNIV KYUNGHE.（7） SAMSUNG ELEC.（5） UNIV SUNGKYU.（4） CHEORWON PLA.（3）
DONG JIN SEM.（2）

Manufacture of n-type graphene quantum dot involves mixing graphene quantum dot and nitrogen-containing compound, and heat-treating mixture.

CHOI S H, SHIN D H, KIM S

Graphene nanoparticle composite for stacked structure, comprises primary nanoparticles of e.g. nickel, silicon, titanium, chromium, manganese, platinum, gold and/or magnesium, crystallized in surface of graphene having chemical bonds.

KIM S, SON B, SHIN M, RYU S, CHOI S, LEE K

Graphene structure made by bonding monoatomic material between carbon atom of graphene structure via doping monoatomic material on mono layer graphene structure, useful for producing piezoelectric power generation element.

KANG H L, KEUN Y L, KIM S, SUNG K K

Non-volatile memory device for use in a digital camera or a pocket telephone, comprises gate electrode that is formed on a control insulating layer formed on the graphene quantum dot layer and is equipped with a tunnel insulating layer.

CHOI S H, JOO S S, KIM S

Manufacturing graphene-ionic liquid composites for electrode materials of supercapacitors, by dispersing graphite oxide composites and ionic liquid-composites into solvent, adding sodium borohydride, and then applying thermal energy.

KANG K, KIM J, KIM K M, KIM S, LEE Y G, SHIN D O

Silicon substrate, has silicone/graphene molecule nano sensor including graphene layer arranged at upper part of silicon nano line, where silicon nano line is combined with substrate and equipped with graphene molecule nano sensor.

CHOI S H, KIM S, KIM J K, SHIN D H

Graphene quantum dot optical detector, has graphene quantum dot layer formed with multiple graphene quantum dots and arranged with graphene layer, where graphene quantum dot layer removes moisture and solution in graphene layer.

CHOI S H, KIM S, KIM C O, SHIN D H

Controlling method of graphene thickness used for e.g. manufacturing semiconductor device, involves ion-implanting carbon atoms in metal, heating carbon atoms-implanted metal, cooling, and growing graphene on metal.

CHOI S H, KIM S, LEE J S

Method for eliminating the adsorbates on the surface of graphene, involves removing the residue of the graphene from the surface using rapid thermal processing process in five to thirty minutes, while removing the imprint of graphene.

CHOI S H, KIM S, JANG C W, SHIN D H

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W