国家/地区 美国（44） 韩国（41） 中国（10） 欧洲专利局（EPO）（9） 日本（4） 世界知识产权组织（2）
IPC部 H（42） C（17） B（14）
G（12）
IPC大类 H01（41） B82（12） C01（12）
C23（5） G02（4） G03（4）
B01（3） B32（3） H10（3）
C09（2） G01（2） G09（2）
IPC小类 H01L（40） C01B（12） B82Y（9）
C23C（5） H01B（5） B82B（4）
G02F（4） G03F（4） B32B（3）
H10B（3） B01J（2） C09K（2）
G01B（2） G01N（2）
IPC H01L021/02（11） H01L029/06（9） H01L029/16（9）
H01L021/768（7） H01L029/786（7） H01L021/285（6）
B82Y030/00（5） B82Y040/00（5） C01B031/02（5）
C01B032/182（5） H01L029/66（5） H01L029/78（5）
C23C016/26（4） H01L021/027（4） H01L029/10（4）
发明人 KIM S（47）
公开年 2023（9） 2021（7） 2022（7） 2014（6） 2012（4） 2016（4） 2013（2） 2017（2） 2018（2）
申请年 2021（11）  2022（10）  2015（6）  2013（5）  2011（4）  2017（3）  2014（2）  2020（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（47）

Interconnect structure for electronic device, comprises first dielectric layer including trench, conductive wire filling inside of trench, first cap layer on top surface of conductive wire, first cap layer including doped graphene, and doped graphene being graphene doped with group fifth element.

JUNG A, KIM S, SHIN K, SHIN K W, KIM S T, JUNG A R

Forming thin film of transition metal dichalcogenide involves providing substrate in reaction chamber, depositing transition metal dichalcogenide thin film on substrate using sputtering process that uses transition metal precursor and chalcogen precursor and is performing at first temperature.

JUNG J, SOHN A, SHIN H, BYUN K, KIM S, KIM C

Positive electrode for lithium battery, has composite material comprising positive active material as core of composite material, and coating layer located on surface of positive active material forming shell on core of composite material.

CHANG W, KIM H, KIM S, GWON H, CHOI H

Layer structure for use in integrated circuit device, comprises lower layer, ion implantation layer in lower layer, and carbon-based material layer on ion implantation layer, and ion implantation layer includes carbon, and further has high electrical performance with ultra small structure.

YOO M, BYUN K, KIM S, LEE C, LEE C S, BYUN K E, YOO M S

Vertical channel array transistor for use in semiconductor device, has graphene insertion layer that is formed between source/drain electrode and channel pattern.

BYUN K, KIM S, KIM C, SHIN K, LEE C, LI C, JIN C, JIN S, BYUN K E, SHIN K W, LEE C S

Semiconductor element used in various integrated circuit devices, has substrate comprising trench, source region, and drain region, where source region and drain region separated apart from each other by trench, gate insulating layer covering bottom surface and sidewall of trench, gate electrode.

CHO Y, BYUN K, KIM S, LEE E, BYUN K E, CHO Y C

Air filter structure, has graphene filter layer arranged on surface of conductive mesh layer, and air filter structure formed on side of mesh layer by electro-deposition process, where mesh layer is formed with mesh.

PARK S M, SAEMI K, KIM S, PARK H J, BAE L, JUNG Y K, JEONG Y W, HONGSEONGPIL

Semiconductor memory device comprises substrate including active region defined by device separation film, where active region including first portion and second portions, second portions being on two opposite sides of first portion, bit line on substrate and extending across active region.

KIM H, KIM S H, LEE J E, JIN X, KIM S, LI J, KIM H S

Depositing film, used in semiconductor element, involves preparing non-planar substrate, depositing film having thickness deviation on first surface, second surface, and inclined surface, and etching film deposited on first surface, second surface, and inclined surface.

SHIN K, KIM S, LEE C, LEE C S, SHIN K W

Interconnect structure used in electronic device, comprises dielectric layer, conductive interconnect on dielectric layer and graphene cap layer on conductive interconnect, where graphene cap layer contains graphene quantum dots.

SHIN H, BYUN K, KIM S, SEOL M, SHIN K, SHIN K W, BYUN K E, SHIN H J