国家/地区 韩国（22） 美国（21） 中国（9） 欧洲专利局（EPO）（6） 世界知识产权组织（3）
IPC部 H（23） B（9） C（7）
G（2）
IPC大类 H01（22） B82（7） C01（7）
C23（3） B29（2） B32（2）
IPC小类 H01L（18） B82Y（7） C01B（7）
C23C（3） B29C（2） B32B（2）
H01J（2）
IPC H01L029/78（11） H01L029/16（10） H01L021/336（8）
H01L029/66（8） B82Y040/00（6） H01L021/02（6）
H01L029/06（6） H01L029/786（6） H01L029/423（5）
H01L029/778（5） B82Y099/00（3） C01B031/02（3）
C23C016/26（3） H01L021/20（3） H01L021/683（3）
发明人 KIM Y（23）
公开年 2014（6） 2022（5） 2013（4） 2015（3）
申请年 2013（6）  2014（5）  2021（3）  2012（2）  2016（2）  2022（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（23）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Heat dissipation sheet comprises graphene oxide particle layers formed by graphene oxide particles having average diameter, and having fine wrinkle structure.

KIM Y, PARK C, KIM Y D, MYUNG P C

Semiconductor device has semiconductor structures with patterns, second conductive pattern that extends in second direction on gate insulation pattern, and second impurity region that is mounted on each of second semiconductor patterns.

HONG J, LEE K, PARK S, KIM I, KIM Y, KIM H, LI J, KIM I K, JIN R, KIM H C, PARK S H, LEE K H

All-solid secondary battery comprises positive electrode comprising positive electrode active material layer, negative electrode comprising negative electrode current collector, and solid electrolyte layer.

CHANG W, KIM Y, KU J, SUGIMOTO T, KU J H, KIM Y E, CHANG W S, SUGIMOTO S, KIM Y I, JANG W S

Vertical variable resistance memory device has pillar structure that is extended in first direction on substrate and penetrating gate electrodes and first insulating patterns, and variable resistance pattern that is formed on sidewall of vertical electrode.

KIM H C, KIM Y, SEO H W, RYU S, LEE K H, HONG J, LI J, YU S, XU H, JIN R, KIM H

Vertical variable resistance memory device, has pillar structure for extending in direction through gate electrodes and insulation patterns on substrate, where pillar structure includes variable resistance pattern on sidewall of vertical gate electrode.

HONG J, LEE K, YOO S, SEO H, KIM Y, KIM H

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C

Method for fabricating graphene nano-mesh in e.g. transparent display device, involves forming graphene nano-mesh including openings by etching oxide layer, and transferring graphene nano-mesh onto substrate after removing catalyst layer.

LEE J, KIM Y, LEE C, LEE J H, KIM Y S, LEE C S

Phase change memory device for use in integrated circuits, has graphene layer formed on lower electrode, phase change material layer formed on graphene layer and insulating layer, and upper electrode placed on phase change material layer.

KIM Y, AHN C, SOOD A, POP E, WONG H S P, GOODSON K E, FONG S, LEE S, NEUMANN C M, ASHEGHI M, KIM Y S, AHN C Y, LEE S H, WONG H P

Semiconductor device for electronic apparatus, has graphene layer that is disposed on and connects source and semiconductor element, and spaced apart from drain.

WENXU X, KIM Y, MOON C, PARK Y, YANG W, LEE J, KIM Y S, MOON C Y, PARK Y Y, YANG W Y, LEE J Y, LEE J H