国家/地区 韩国（10） 美国（7） 中国（4） 欧洲专利局（EPO）（4）
IPC部 H（10） B（5） C（2）
IPC大类 H01（9） B82（4） C01（2）
IPC小类 H01L（9） B82Y（4） C01B（2）
IPC H01L029/78（5） B82Y040/00（4） H01L021/336（4）
H01L029/16（4） H01L029/66（3） H01L029/786（3）
B82Y099/00（2） C01B031/02（2） H01L021/02（2）
H01L021/04（2） H01L021/683（2） H01L029/06（2）
H01L029/417（2） H01L029/778（2） H01L033/36（2）
发明人 KIM Y S（10）
公开年 2014（7） 2013（2）
申请年 2013（10）
专利权人 SAMSUNG ELEC.（6） KIM Y（2） LEE J（2）

Donor substrate for laser transfer, has intermediate layer arranged on light-to-heat conversion layer, where light-to-heat conversion layer comprises graphene.

KWON J, YOON J, PYO S, SONG H, YOO B, LEE B, YE J, KIM Y, KWON J Y, YOON J H, PYO S W, SONG H J, YOO B W, LEE B S, YE J M, KIM Y S

Flexible printed circuit board consists of adhesive substrate made of polymer film to-be-attached to predetermined structure, graphene electrode and metal electrode.

KIM Y S

Method for manufacturing LED, involves arranging graphene electrode layer on structure, arranging nitride base cermets semiconductor layers with structure, and arranging active layer between nitride base cermets semiconductor layers.

PARK H J, PARK J B, JUNG S H, BAEK J H, OH H S, TAK J, JU J W, LEE S J, LEE S H, KIM J Y, JEONG T H, KIM Y S

Manufacturing graphene, involves pre-processing substrate using oxidization gas plasma and supplying processed gas containing carbon source to substrate.

YOON E J, YUH H K, JOO K S, CHUN S H, KIM Y S, JERNG S K

Method for transferring graphene to manufacture e.g. bipolar junction transistor, involves bonding graphene layer to target layer, and removing sacrificial layer using excimer laser to separate substrate from graphene layer.

WENXU X, LEE J, MOON C, PARK Y, YANG W, KIM Y, XIANYU W, LEE J Y, MOON C Y, PARK Y Y, YANG W Y, KIM Y S, LEE J H

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R

Transistor useful for electronic devices such as a radio frequency device for high frequency and display, comprises a channel layer including graphene, a gate insulating layer, a gate facing the channel layer, and a source and a drain.

LEE C, KIM Y, LEE J, JUNG Y, LEE C S, KIM Y S, LEE J H, JUNG Y S

Method for manufacturing graphene device, involves forming device portion on first substrate, which is provided with graphene layer and attaching second substrate onto device portion and removing first substrate.

LEE C, LEE J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, MOON C Y, MUN Z R

Transistor e.g. three-dimensional graphene channel transistor used in semiconductor device, has channel layer that is provided to cover both side surfaces and top surface of gate, and channel layer is provided with graphene.

LEE C, LEE J, KIM J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, KIM J S, MOON C Y, MUN Z R