国家/地区 韩国（10） 美国（7） 中国（2） 欧洲专利局（EPO）（2）
IPC部 H（9） B（5） C（3）
IPC大类 H01（9） B82（4） C01（3）
IPC小类 H01L（8） B82Y（3） C01B（3）
IPC H01L029/786（7） H01L021/336（6） H01L029/78（6）
H01L029/16（5） H01L029/66（5） H01L029/778（4）
B82Y040/00（3） B82Y099/00（3） H01L029/423（3）
C01B031/02（2） H01L021/00（2） H01L021/683（2）
H01L029/06（2） H01L029/417（2）
发明人 LEE C（10）
公开年 2013（10）
申请年 2012（4）  2011（3）  2013（3） 
专利权人 SAMSUNG ELEC.（7）

Graphene switching device comprises first electrode and insulating layer in semiconductor substrate forming energy barrier between graphene layer and electrode, metal particles, second electrode, gate insulating layer and gate electrode.

SEO D, KIM S, PARK S, YUN Y, LEE Y Y, LEE C, DAVID S, KIM S W, PARK S J, YUN Y J, LEE Y H

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Method for manufacturing graphene device, involves forming device portion on first substrate, which is provided with graphene layer and attaching second substrate onto device portion and removing first substrate.

LEE C, LEE J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, MOON C Y, MUN Z R

Transistor e.g. three-dimensional graphene channel transistor used in semiconductor device, has channel layer that is provided to cover both side surfaces and top surface of gate, and channel layer is provided with graphene.

LEE C, LEE J, KIM J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, KIM J S, MOON C Y, MUN Z R

Radio frequency device with suspended graphene, comprises a substrate, a trench formed on substrate, and a source electrode, drain electrode and gate electrode formed on upper part of suspended graphene or substrate.

AHN J, HONG B H, JANG H, LEE C

Manufacture of reduced graphene oxide nanofluid for use as filler, involves reducing graphene oxide and dispersing reduced graphene oxide in solvent.

JANG J S, MIN S H, LEE C

Manufacturing graphene electronic device involves making metal compound layer and catalyst layer on substrate, growing graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.

LEE C S, KIM S W, PARK S J, SEO D, YUN Y J, LEE Y H, LEE C, PARK S, YUN Y

Graphene device such as transistor comprises channel layer having graphene on substrate; source electrode on first region of channel layer; drain electrode on second region of channel layer; capping layer; gate insulating layer; and gate.

XIANYU W, MOON C, LEE J, LEE C, WENXU X, MOON C Y, LEE J Y, LEE C S

Graphene transferring element for high radio frequency device, has metal thin-film layer pattern and graphene layer stacked on adhesive part, where metal thin- film layer pattern and graphene layer have same shape.

LEE J, LEE C, KIM Y, SONG H, HO L J, SEUNG L C, SEONG K Y, JAE S H, LEE J H, LEE C S, KIM Y S, SONG H J

Preparing silicon oxide, comprises mixing graphene and graphite to produce a graphene-carbon complex, and coating the graphene-carbon complex on the silicon oxide particle's surface.

KANG Y K, LEE C