国家/地区 韩国（20） 美国（17） 中国（9） 欧洲专利局（EPO）（8） 世界知识产权组织（8） 日本（6） 台湾（4）
IPC部 H（19） B（9） C（6）
G（2）
IPC大类 H01（17） B82（6） C01（6）
B01（3） C23（2） G01（2）
H04（2） H05（2）
IPC小类 H01L（12） C01B（6） H01B（4）
B82B（3） B82Y（3） H01M（3）
B01J（2） C23C（2） H01G（2）
H04R（2）
IPC H01L029/16（9） H01L029/78（9） C01B031/04（6）
H01L021/336（6） H01L029/66（5） H01L021/02（4）
H01L029/06（4） B82B003/00（3） H01B013/00（3）
H01L029/10（3） H01L029/778（3） H01M004/62（3）
B01J019/24（2） B82Y040/00（2） C01B031/02（2）
发明人 LEE J（21）
公开年 2015（13） 2014（8）
申请年 2014（21）
专利权人 SAMSUNG ELEC.（9） LEE J（3） UNIV SUNGKYU.（3） HANWHA CHEM .（2）
LEE M（2） LG CHEM CO L.（2） LG CHEM LTD（2） LG ELECTRONI.（2）
SHIN H（2）

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Method for manufacturing self light-emitting device, involves contacting graphene layer of graphene donor unit with organic part, and removing release layer and elastic stamp layer from graphene donor unit.

LIM J T, LEE J I, CHU H Y, AHN J T, LEE J, HAN J, OH J, YU B G, MOON J, CHO N S, HAN J H, OH J Y

Graphene transistor having tunable barrier has gate insulating layer that covers portion of graphene layer, gate electrode on gate insulating layer, such that energy barrier is between semiconductor substrate and graphene layer.

PARK J, SHIM J, PARK H, LEE J, LEE J H, PARK H Y, PARK J H, SHIM J W

Conductive composition used for slurry composition for forming electrode, comprises carbon-based materials chosen from carbon nanotubes, graphene and carbon black, and dispersing agent comprising polyaromatic hydrocarbon oxides.

LEE K S, SOHN K N, KWON W J, YANG S B, KIM I Y, YOO K H, LEE M J, LEE J Y, LEE K, SOHN K, KWON W, YANG S, KIM I, YOO K, LEE M, LEE J, LI M, LI J

Production of graphene involves applying physical force to liquid dispersion of dispersing agent containing polyaromatic hydrocarbon oxide, and carbon-based material comprising graphite, and forming graphite into nano graphene flakes.

SOHN K N, YOO K H, KWON W J, LEE K S, YANG S B, KIM I Y, LEE M J, LEE J Y, SOHN K, YOO K, KWON W, LEE K, YANG S, KIM I, LEE M, LEE J, LI M, LI J

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M

Sound generating apparatus i.e. speaker for acoustic-apparatus e.g. earphone, has driving part for supporting vicinity of graphene acoustic vibrating film and driving vibrating film by generating magnetic power proportional to current.

YEE Y, LEE J

Semiconductor device for electronic apparatus, has graphene layer that is disposed on and connects source and semiconductor element, and spaced apart from drain.

WENXU X, KIM Y, MOON C, PARK Y, YANG W, LEE J, KIM Y S, MOON C Y, PARK Y Y, YANG W Y, LEE J Y, LEE J H

Nanopore FET device, has electrode layers arranged at respective opposite sides of nanopore on top surface of graphene layer, and insulating layer whose center region is removed such that center portion of graphene layer is exposed.

JEON T, SHIM J, EOM K, LEE D, LEE J, JEON T H, SHIM J Y, EOM K S, LEE D H, LEE J H

Graphene-based and molybdenum sulfide-based semiconductor device i.e. FET, has graphene layer arranged on substrate, and fluoropolymer or hydrofluoropolymer layer arranged on graphene layer.

DODABALAPUR A, AKINWANDE D, HA T, LEE J