国家/地区 美国（21） 韩国（19） 世界知识产权组织（10） 中国（9） 欧洲专利局（EPO）（8） 日本（5） 台湾（5）
IPC部 H（21） C（10） B（5）
IPC大类 H01（19） C01（10） B01（3）
B82（2） H04（2）
IPC小类 H01L（11） C01B（10） H01B（5）
H01M（5） B01J（2） B82Y（2）
H01G（2） H04R（2）
IPC C01B031/04（9） H01L029/16（9） H01L029/78（7）
C01B031/02（5） H01L029/66（5） H01M004/62（5）
C01B032/182（4） H01L021/336（4） H01L029/06（4）
C01B032/184（3） H01B001/04（3） H01B013/00（3）
H01L021/02（3） H01L021/768（3） H01L029/778（3）
发明人 LEE J（23）
公开年 2015（23）
申请年 2014（13）  2015（8）  2013（2） 
专利权人 SAMSUNG ELEC.（9） LEE J（5） HANWHA CHEM .（3） LEE C（3）
LG CHEM CO L.（3） LG CHEM LTD（3） SHIN H（3） LEE M（2）
PARK S（2） UNIV SEOUL N.（2）

Preparation of carbon sheets used in e.g. electronic devices, involves growing graphene nanopowder comprised in graphene seed layer into carbon sheet comprising single layered graphene sheet of preset length and graphite sheet.

LEE J, PARK Y, CHOI W, LEE J K, PARK Y S, CHOI W K

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Detecting nucleic acid e.g. DNA, by preparing sample comprising target nucleic acid, adding and mixing complementary peptide nucleic acid probe to sample containing fluorescent substance, and adding oxidized graphene to mixture.

MIN D H, LEE J

Porous silicon-carbon composite used for negative electrode active material, comprises core including active particles containing silicon particles and/or silicon oxide particles and shell layer including graphene coated on core.

HWANG E Y, KIM I Y, LEE J Y, KWON W J, SOHN K N, YANG S B, HUANG Y, KIM I, LEE J, KWON W, SOHN K, YANG S

Method for fabricating graphene-doped carbohydrate-derived hard carbon composite material for graphene-doped carbohydrate-derived hard carbon composite battery electrode of alkali metal-ion battery, involves forming hard carbon composite.

BOMMIER C, JI X, LEE J, LU Y, LUO W, VAIL S

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Method for fabricating field effect transistor, involves filling slit with potential barrier material is provided to induce Fowler-Nordheim tunneling through graphene channel layer when gate voltage is applied to gate electrode.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J

Method for manufacturing self light-emitting device, involves contacting graphene layer of graphene donor unit with organic part, and removing release layer and elastic stamp layer from graphene donor unit.

LIM J T, LEE J I, CHU H Y, AHN J T, LEE J, HAN J, OH J, YU B G, MOON J, CHO N S, HAN J H, OH J Y

Graphene transistor having tunable barrier has gate insulating layer that covers portion of graphene layer, gate electrode on gate insulating layer, such that energy barrier is between semiconductor substrate and graphene layer.

PARK J, SHIM J, PARK H, LEE J, LEE J H, PARK H Y, PARK J H, SHIM J W

Electrode connecting structure for electronic device, has metal layer that is formed on adhesion layer, which is disposed on graphene layer.

LEE J, LEE C, PARK S, LEE J H, LEE C S, PARK S J