国家/地区 韩国（22） 美国（16） 中国（6） 欧洲专利局（EPO）（6）
IPC部 H（16） B（10） C（10）
G（2）
IPC大类 H01（16） B82（9） C01（7）
C08（3） H05（2）
IPC小类 H01L（15） B82Y（7） C01B（7）
C08K（3） C08L（3） B82B（2）
C08G（2） H01B（2） H05B（2）
IPC H01L029/78（11） H01L029/16（10） H01L021/336（8）
H01L029/66（6） C01B031/02（5） H01L029/786（5）
H01L021/02（4） H01L029/06（4） H01L029/10（4）
B82Y010/00（3） C01B031/04（3） C08K003/04（3）
H01L021/20（3） B82B003/00（2） B82Y040/00（2）
发明人 LEE J H（22）
公开年 2014（22）
申请年 2013（15）  2012（4）  2014（3） 
专利权人 SAMSUNG ELEC.（16） LEE J（5） UNIV SUNGKYU.（3） BYUN K（2）
CHUNG H（2） HEO J（2） JEON T（2） KIM Y（2）
PARK S（2） SEO D（2） SNU R DB FO.（2） SONG H（2）
UNIV SEOUL N.（2）

Method for transferring graphene during manufacturing graphene applied device that is used in e.g. high speed radio frequency switching device, involves transferring protection metal layer and graphene layer from supporter to substrate.

LEE J, KIM Y, MOON C, LEE S, LEE C, LEE J H, KIM Y S, MOON C Y, LEE S H, LEE C S

Silica-graphene oxide complex used in composition and epoxy resin used for forming epoxy resin product e.g. plastic material having excellent tensile strength, elastic modulus and impact strength.

LEE J H, HEO S B, KIM N H, JIANG T, TONGWU J

Producing graphene-reinforced polyparaphenylene benzobisoxazole composite used in e.g. film, by dehydrochlorinating composite, polymerizing, carrying out cyclization reaction, and injecting graphene nanoparticles to mixture.

JEONG Y G, MIN B G, KWAN H Y, LEE J H

Graphene memory has Schottky barrier that is formed between conductive semiconductor substrate and graphene layer such that graphene layer is used as charge-trap layer for storing charges.

LEE J, CHUNG H, PARK S, BYUN K, SEO D, SONG H, HEO J, LEE J H, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S, HUH J, JUNG H, SONG C, SAIL D

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Graphene electronic device has flash memory region and ferroelectric memory region that are positioned on graphene layer.

KIM Y, LEE C, LEE J, KIM Y S, LEE C S, LEE J H

Method of transferring graphene involves forming graphene layer on substrate including semiconductor catalyst and forming thin film on graphene layer.

CHOI J Y, LEE J H, WHANG D M

Method for transferring graphene to manufacture e.g. bipolar junction transistor, involves bonding graphene layer to target layer, and removing sacrificial layer using excimer laser to separate substrate from graphene layer.

WENXU X, LEE J, MOON C, PARK Y, YANG W, KIM Y, XIANYU W, LEE J Y, MOON C Y, PARK Y Y, YANG W Y, KIM Y S, LEE J H

Cathode active material for lithium ion capacitor, comprises graphene placed in active material, where graphene and graphene oxide are mixed with amide group.

CHOI J W, JIN J K, LEE J H, RYOU M H

Electronic device e.g. field effect transistor (FET) has graphene that directly contacts area of semiconductor layer, and metal layer on graphene.

BYUN K, PARK S, SEO D, SONG H, LEE J, CHUNG H, HEO J, BYUN K E, PARK S J, SONG H J, LEE J H, CHUNG H J, HEO J S