国家/地区 美国（13） 韩国（11） 中国（5）
IPC部 H（13） C（3） G（2）
IPC大类 H01（13） C01（3） G01（2）
IPC小类 H01L（13） C01B（3）
IPC H01L029/16（9） H01L029/66（5） H01L029/786（5）
H01L029/267（4） H01L031/028（4） H01L027/146（3）
H01L029/06（3） H01L029/778（3） H01L029/78（3）
H01L045/00（3） C01B031/04（2） H01L021/02（2）
H01L021/336（2） H01L027/30（2） H01L029/24（2）
发明人 LEE K（13）
公开年 2014（2） 2016（2） 2017（2） 2022（2）
申请年 2015（3）  2014（2）  2016（2）  2021（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（13）

Image sensor comprises substrate including multiple photoelectric conversion elements, variable filter layer provided on substrate, and multiple micro lenses provided on variable filter layer, which comprises multiple first electrodes in first direction, and having first width in second direction.

JOE I, LEE K, KANG S, JANG M, CHANG M, KANG S K, LEEKWANGMIN, CHO I S, CHO I, LI G

Semiconductor device has semiconductor structures with patterns, second conductive pattern that extends in second direction on gate insulation pattern, and second impurity region that is mounted on each of second semiconductor patterns.

HONG J, LEE K, PARK S, KIM I, KIM Y, KIM H, LI J, KIM I K, JIN R, KIM H C, PARK S H, LEE K H

Vertical variable resistance memory device, has pillar structure for extending in direction through gate electrodes and insulation patterns on substrate, where pillar structure includes variable resistance pattern on sidewall of vertical gate electrode.

HONG J, LEE K, YOO S, SEO H, KIM Y, KIM H

Graphene device e.g. multifunctional device of switching device or electronic device, has gate that faces functional layer with graphene layer, and gate insulation layer that is formed between graphene layer and gate.

HEO J, LEE K, PARK S

Mass spectrometry apparatus for analyzing a semiconductor wafer, includes hybrid provider which provides zinc oxide-graphene hybrid to predetermined region on semiconductor wafer.

KIM K J, UM K, YOON C S, LEE K, JIN G, YAN J, YIN Z, LI K, KIMKUKJOO, LEE K T, UM K J

Optical sensor comprises first electrode, graphene quantum dot layer, graphene quantum dot layer which comprises multiple of first graphene quantum dots which are bonded to first functional group and multiple of second graphene quantum dots.

LEE J, SHIN H, LEE D, PARK S, LEE K, LEE E, JO S, HEO J, LEE G, LI Y, ZHAO C, HUH J, LEE J H, SHIN H J, LEE D W, PARK S J, LEE K Y, LEE E K, JO S H, HEO J S

Photodetector for use as light-receiving device, has second graphene layer that is set on 2D material layer, and first electrode that is set on first graphene layer, and second electrode that is set on second graphene layer.

HEO J, PARK S, LEE K, LEE S, LEE E, LEE J, HEO J S, PARK S J, LEE K Y, LEE S Y, LEE E K, LEE J H

Graphene electronic device e.g. sensor, has source electrode placed on one and another end of channel layer including semiconductor and graphene layer which includes graphene islands spaced apart from each other.

LEE K, HEO J, YU W, SHIN Y, HEO J S, LEE K Y, SHIN Y S, YU W J

Fin-type graphene device i.e. graphene FET, for e.g. optical sensor, has gate electrode placed on gate insulating layer, and source electrode and separate drain electrode that are placed on side surface of graphene channel layer.

LEE M, LEE J, HEO J, LEE K, LEE M H, LEE J H, HEO J S, LEE K Y

Graphene device i.e. multi-functional device, for use in e.g. electronic apparatus e.g. transistor, has gate for facing functional layer with graphene layer, and gate insulation layer formed between graphene layer and gate.

HEO J, LEE K, PARK S, HEO J S, LEE K Y, PARK S J, LEE G, HUH J