国家/地区 美国（18） 韩国（14） 中国（6） 欧洲专利局（EPO）（5）
IPC部 H（19） G（5） C（3）
IPC大类 H01（18） C01（3） G11（3）
G06（2）
IPC小类 H01L（17） C01B（3） G11C（3）
G06N（2）
IPC H01L029/16（9） H01L029/06（7） H01L029/417（7）
H01L029/24（6） H01L029/423（6） H01L029/66（6）
H01L029/778（6） H01L029/78（6） H01L029/786（6）
H01L021/02（5） H01L021/336（5） H01L029/10（5）
H01L029/792（4） H01L029/165（3） H01L029/45（3）
发明人 LEE M（21）
公开年 2021（7） 2022（7） 2015（3） 2023（3）
申请年 2021（9）  2020（4）  2022（3）  2014（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（21）

Electronic device e.g. semiconductor memory device, for use in memory system, has gate oxide layer formed between resistance switching layer and gate, source and drain that are arranged on switching layer and spaced apart from each other, and color filter arranged on switching layer.

SHIN H, KIM H, HINTON H J, LIU C, HAM D, JANG H, LEE M

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Semiconductor device has gate electrode, gate dielectric, channel layer with two-dimensional semiconductor material, where at location of gate electrode not vertically overlapping source and drain electrodes, height of gate electrode is defined from lowermost to uppermost surface of gate electrode.

SHIN H, CHO Y, SEOL M, LEE M

Lithium battery, e.g. solid state battery, used in electric vehicles, comprises cathode, anode, liquid-impermeable ion-conductive membrane, and interlayer has metal-carbon composite between anode and liquid-impermeable ion-conductive membrane.

LEE M, KIM J, ROEV V, KIM J S

Field effect transistor structure comprises a fin-shaped channel protruding from a substrate and extending in one direction, a source electrode on one side of the fin-shaped channel, and a drain electrode separated from the source electrode with the fin-shaped channel.

LEE E, YANG B, KIM S, CHOI T, LEE M, SHIN H, KIM C, SHIN H J, HYUN L, CHOI T J, YANG B S

Nonvolatile memory device for use in cellular phone, has many memory cell strings, each of the many memory cell strings has insulating spacers, gate electrodes each extending in first direction and alternately arranged with many insulating spacers in second direction perpendicular to first direction.

LEE C, SHIN H, OH Y, KIM T, LEE M, HYUN L, OH Y T, SHIN H J, LEE C S

Neural computer, has image classifier for classifying images received through preprocessor by using data output by flattening unit as input value, where preprocessor includes optical signal processor to receive image and generate feature map.

HAM D, LEE M, SHIN H, HINTON H J, JANG H, KIM C, HENRY H, SHIN H J, HYUN L, HAM D H

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Field effect transistor has channels having hollow closed cross-sectional structure when viewed in first cross-section formed by plane across source and drain electrodes in direction perpendicular to substrate, and gate insulating layers.

YOO M, SHIN H, KWON J, LEE M, SEOL M, YU M, SHEN X, QUAN J, HYUN L, SHIN H J, YOO M S

Field effect transistor (FET) for electronic device, has gate insulating layers that are provided in channels, and gate electrode that is insulated from source electrode and drain electrode.

SEOL M, LEE M, KWON J, SHIN H, YOO M