国家/地区 中国（25）
IPC部 C（17） H（11）
IPC大类 C01（13） H01（11） C04（7）
IPC小类 C01B（13） H01L（11） C04B（7）
IPC C01B031/04（13） C04B041/50（7） C04B041/85（7）
H01L029/786（7） H01L021/336（5） H01L021/04（3）
H01L021/205（2） H01L021/324（2）
发明人 LEI T（25）
公开年 2013（25）
申请年 2013（17）  2012（8） 
专利权人 UNIV XIDIAN（24）

Preparation of graphene on silicon carbide substrate used for manufacturing microelectronic devices and biological sensors, involves washing silicon carbide substrate, and placing in graphene growth device with argon gas and chlorine.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Preparation of large-area graphene used for manufacturing microelectronic devices and biological sensors, involves cleaning silicon substrate, placing in deposition reaction chamber, introducing propane and silane gas, and annealing.

GUO H, LEI T, LIU J, ZHANG F, ZHANG Y

Preparation of large-area graphene used for biological, optical and electrical sensor, involves cleaning silicon carbide, heating, carrying out hydrogen etching treatment, mixing argon and carbon tetrachloride, plating and annealing.

GUO H, LEI T, LIU J, ZHANG Y, ZHANG C

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparing large-area graphene on silicon substrate based on nickel film annealing comprises e.g. growing carbon layer on substrate, growing C3-silicon carbide heteroepitaxial film, hydrogen etching, depositing nickel layer and annealing.

GUO H, LEI T, ZHANG F, ZHANG Y, HU Y

Preparing large-area graphene based on nickel film annealing and chlorine reaction comprises e.g. growing carbon layer on substrate, growing 3C-silicon carbide heteroepitaxial film, hydrogen etching, depositing nickel layer and annealing.

GUO H, LEI T, WEI C, ZHANG F, ZHANG Y

Manufacture of side grid graphene transistor involves depositing nickel membrane on graphene, annealing, depositing metal palladium/gold layer on graphene sample wafer, forming metal electrode, forming photomask, and drying.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C

Method for preparing annealing film of chlorine reaction side-gate graphene of thin film transistor, involves etching side gate structure transistor image window on Silicon dioxide mask layer, and heating pattern of window in quartz tube.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C