国家/地区 美国（12）
IPC部 H（10） B（3） C（3）
IPC大类 H01（9） C08（2） C09（2）
IPC小类 H01L（9） C08K（2） C09D（2）
IPC H01L021/768（5） H01L023/532（5） H01L023/528（3）
C08K003/04（2） H01L023/48（2） H01L023/522（2）
H01L029/06（2） H01L029/10（2） H01L029/423（2）
H01L029/786（2）
发明人 LI S（12）
公开年 2021（4） 2023（4）
申请年 2022（5）  2020（3） 
专利权人 TAIWAN SEMIC.（6）

Semiconductor structure use in semiconductor integrated circuit industry, has dielectric layer formed on substrate, graphene conductive structure formed with graphene layer, and graphene layer extending direction parallel to inner side surface of dielectric layer.

LI M, LU M, LI S, ZHAN Y, YANG S, GUO Z, LEE M, CHAN Y, KUO T

Method for manufacturing semiconductor structure, involves forming graphene conductive structure on metal layer, where conductive graphene is filled in interconnection channel and electrically connected with contact piece.

LI M, YANG S, ZHAN Y, LI S, ZHONG J, YEH C, LEE M, CHAN Y, CHUNG C

Interconnection structure, has graphene layer arranged between first graphene layer and second graphene layer, where second graphene layer is arranged between conductive feature and dielectric material.

SUI X, ZHANG X, HUANG X, YANG G, CAI C, LEE S, LI S, SHUE S, CHANG H, HUANG H, YANG K, TSAI C, LEE C

Interconnection structure useful for semiconductor device, has more than one first conductive features disposed in first dielectric layer, where more than one first conductive features include first metal, and multiple graphene layers include second metal, which is different from first metal.

SUI X, LI M, YANG S, ZHAN Y, LI S, SHUE S, LEE M, CHAN Y

Intraconnection structure useful in a post-section process of an integrated circuit i.e. semiconductor device, has second portion of conductive layer adjacent to first portion of conductive layer, and dielectric material contacts first interface portion and third interface portion.

MU X, LI M, YANG S, ZHAN Y, LI S, SHUE S, LEE M, CHAN Y

Self-rotating graphene radiating device for direct-drive electro-hydraulic servo actuator, has shaft rod coaxially arranged with inner wall of shell, and graphene radiating layer coated on shell, inner and outer wall of outer end cover.

PENG J, LI S, ZHANG Y, YANG R

Laminated structure used in magneto-resistive element used in hard-disk drive, has graphene that is directly-contacted with Heusler alloy on surface of Heusler alloy, and is reaction product of Heusler alloy and carbon.

LI S, SAKAI S

Composition used for coating on substrate, comprises layer comprising colloidal silica and polymer comprising monomer units, and another layer comprising carbon additive and crosslinked polymer comprising polymer comprising monomer units.

CHAN C M, LI S

High-threshold power semiconductor device has heavily doped semiconductor layer provided on surface of channel layer in cell region, on which source metal electrode is provided, terminal region in which channel layer is extended and wrapped.

SUN W, ZHANG C, XIN S, LI S, QIAN L, GE C, LIU S, SHI L

Surface-metalized polymer article comprises polymer component, first layer composed of multiple graphene sheets and conducive filler coated on polymer component surface, and second layer of plated metal deposited on first layer.

LIN Y, LEE S, JHONG Y, ZHAMU A, JANG B Z, LI S