国家/地区 中国（9）
IPC部 H（7） C（6） B（4）
IPC大类 H01（7） C01（3） C08（3）
C23（2）
IPC小类 H01L（4） C01B（3） C08J（3）
C08K（2） C08L（2） C23C（2）
H01B（2）
IPC H01L021/768（3） H01L023/532（3） H01L027/108（3）
C01B031/04（2） C08J003/075（2） C08J003/20（2）
C08J005/18（2） C08K003/04（2） C23C016/26（2）
H01L021/285（2） H01L029/45（2）
发明人 LIM H（9）
公开年 2022（3） 2016（2）
申请年 2015（2）  2016（2）  2021（2） 
专利权人 SAMSUNG ELEC.（4） UNIV PUTRA M.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Wiring structure for use in semiconductor device, has first conductive pattern, ohmic contact pattern, oxidation prevention pattern, diffusion barrier, and second pattern sequentially stacked in stated order on substrate.

JEONG G, LEE S, YOON J, YAMAMOTO K, SHIN H, BYUN K, CHO M, LIM H, ZHENG G, LI Z, YOUN J, SHAN B, SHEN X, LIM H S, JO M, BYUN K E, SHIN H J, SU Y J, LEE S Y, JUNG K O

Manufacture of graphene-polyimide composite film for electronic material, involves mixing mixed solution containing imidization conversion liquid and polyimide precursor solution with graphene dispersion, and heat-treating obtained gel film.

OH J Y, LIM H, LEE K, BACK S, LEE K N, WU Z

Frontal structure, has graphene coating film formed in order to surround copper wire with rapidity thermal chemical vapor deposition process, where copper wire is extended to one-way direction.

WON D K, LIM H T, RYU J C, YUAN D, LIM H, RYU J

Transfer of graphene-based material used in e.g. telecommunication applications, involves forming graphene-based material layer on holding substrate, and transferring released layer of graphene-based material to active substrate.

LIM H N, MAHDI M A, ABDUL RASHID S, CHEE W K, NG C H, ABDUL BASHID H A, HUANG N M, ABDUL R S, ABDUL B H A, LIM H, CHEN W, WU Z

Flexible supercapacitor comprises electrolyte sandwiched between nickel foams electrodeposited with nanocomposite which contains conducting polymer, graphene oxide, and metal oxide.

LIM H N, CHEE W K, NG C H, HUANG N M, HUANG Q, XU W, LIM H

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Polymer resin composition useful for manufacturing an insulating film for manufacture of a build-up multi-layered printed circuit board, comprises polymer resins, and graphene for linking the polymer resins with larger attraction.

LEE K S, HONG S S, LIM H H, LEE H Y, CHO J C, KYU S L, SANG S H, HYUN H L, HWA Y L, JAE C C, HONG S, LEE H, LEE K, LIN H, JO J, LIM H, CHO J