国家/地区 美国（14）
IPC部 C（12） H（8） B（6）
A（2） G（2）
IPC大类 H01（8） C01（7） B32（4）
B82（3） B01（2） C08（2）
C09（2）
IPC小类 C01B（7） H01L（6） B32B（4）
B82Y（3） C08K（2） C09K（2）
H01B（2）
IPC C01B031/04（4） H01L021/02（4） H01L029/66（3）
H01L029/78（3） B32B033/00（2） B82Y030/00（2）
B82Y040/00（2） C09K005/14（2） H01L021/20（2）
H01L027/12（2） H01L029/06（2） H01L029/423（2）
H01L033/00（2）
发明人 LIN H（14）
公开年 2013（4） 2014（2） 2015（2） 2017（2） 2022（2）
申请年 2012（3）  2013（3）  2014（2）  2017（2）  2021（2） 
专利权人 LAIZUAN CO L.（4） LIN H（4） RITEDIA CORP（4） SUNG C（3）
TAIWAN SEMIC.（3） LIN I（2） QUE Y（2） UNIV NAT TSI.（2）
UNIV TAIWAN .（2）

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Nanogel for preventing or treating disease or condition susceptible to amelioration by anticoagulant or antioxidant for e.g. thrombophilia, vascular thrombosis, comprises graphene-like nanosheet and polysaccharide.

LIN H, HUANG C, MAO J, WANG C, HUANG Z

Process for preparing porous graphene-based film, involves separating reduced graphene oxide sheet having pore of different size is separated from sheet overlapping by different interlayer distance.

LIN H, JIA B

Structure for providing a Gate-All-Around (GAA) device, includes nanobar which extends from graphene layer and along direction normal to vertical plane defined by graphene layer.

YANG C, LIU C, LIN H, YEH L

Method for fabricating gate-all-around (GAA) device for manufacturing semiconductor integrated circuit, involves extending nanobar in direction parallel to horizontal plane and normal to vertical plane defined by graphene layer.

YANG C, LIU C, LIN H, YEH L

Method for fabricating reduced-graphene oxide circuit, involves reducing graphene oxide layer into reduced graphene oxide by laser, and forming hydrophilic layer by applying piranha solution to react with surface of substrate.

YUNG K, LIEM H, CHOY H, LIN H, RONG J, CAI H

Multilayer Silicon/graphene composite anode structure for half and full lithium-ion cells, has graphene thin film deposited onto amorphous phase upper silicon thin film of Silicon/graphene unit layer, where layer is deposited on substrate.

TATSUHIRO M, CHEN C, HUNG T, MOHAMED S G, LIU R, HU S, LIN H, LIN Y, SUNG C, HWANG B, CHEN Z, HONG T, HUANG B, SEN D, SHAD M, SONG J, CHEN C J, HUNG T F, LIU R S, HU S F, LIN H Z, LIN Y Q, SUNG C M, HWANG B J

Heat conducting composite material, useful in thermal garment, solar microwave water purifier, infrared paint or LED, comprises a matrix, and many graphene sheets respectively having two-dimensional planar structure.

LIN H, LIN I, LIN Y, SONG J, SUNG C, SUNG C M, LIN I C

Fabricating graphene platelet, comprises providing highly-graphitized graphene, and providing shear force acting on graphitized graphene to separate highly-graphitized graphene into graphene platelets having single or multi-layer structure.

LIN I, LIN H, LIN Y, SONG J, SUNG C, LIN I C, SUNG C M, LIN H C

Making graphene layer used as transparent electrode layer in optoelectronic devices, comprises e.g. forming metal layer on first side of substrate, forming carbon source layer on metal layer and irradiating second side of substrate by laser.

CHUEH Y, DING J, LIN H, HUANG Y, QUE Y