国家/地区 韩国（20） 美国（12） 中国（10） 欧洲专利局（EPO）（6） 世界知识产权组织（6） 日本（5）
IPC部 H（13） C（10） B（6）
G（3）
IPC大类 H01（13） C01（10） B82（5）
G03（3） B01（2） C23（2）
IPC小类 C01B（10） H01L（6） B82Y（5）
H01M（4） G03F（3） C23C（2）
H01B（2） H01G（2）
IPC C01B031/04（9） B82Y030/00（4） H01M004/62（4）
H01M010/052（4） B82Y040/00（3） H01L029/16（3）
H01M004/58（3） C01B032/182（2） C01B032/19（2）
C01B032/194（2） C01B032/198（2） G03F007/00（2）
G03F007/09（2） G03F007/11（2） H01L021/027（2）
发明人 PARK S（20）
公开年 2016（20）
申请年 2015（12）  2016（5）  2014（3） 
专利权人 SAMSUNG ELEC.（8） LG CHEM LTD（5） AICT（2） DONG JIN SEM.（2）
LG CHEM CO L.（2） PURITECH CO .（2） UNIV SEOUL N.（2）

Manufacture of graphene used in manufacture of e.g. display apparatus, involves adding graphite-based material to fluid containing solvent and rotating fluid to perform delamination of graphite-based material by shear force.

KIM T, PARK S, YOUNG K T, JUN P S

Functionalized graphene used for preparing dispersion, comprises carbon material chosen from graphene, reduced graphene oxide, and graphene oxide, and amine group containing monovalent amine group and secondary amine group.

PARK S, CHOE H, LEE S Y, GONG S Y, PARK S C, CHOE H S, PIAO S, CUI X, LI X, KONG X

Manufacture of graphene involves supplying graphite feed solution containing dye and including intramolecular anthraquinone, triphenylmethane, azobenzene or phthalocyanine structure, into high-pressure homogenizer comprising microchannel.

LEE M J, SOHN K N, PARK S H, SOHN K, PARK S

Cathode layer for lithium secondary battery of mobile electronic device, has carbon structure including cavity without binder and silicon particles in cavity, where structure comprises one of graphene, reduced graphene oxide and graphite.

LEE D, SHIN H, PARK S, LEE D W, SHIN H J, PARK S J

Anode material for secondary battery used in electronic device has graphene foam structure that includes graphene frames connected to each other, and nanostructures in pores of graphene foam structure.

SHIN H, LEE D, PARK S, SHIN H J, LEE D W, PARK S J

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Hardmask composition used for forming pattern, comprises several graphene nanoparticles having size of preset range, and solvent.

SHIN H, KIM S, SEOL M, PARK S, CHO Y, SHIN H J, KIM S W, SEOL M S, PARK S J, CHO Y C, XUE M, ZHAO L

Hardmask composition for pattern formation comprises a set of graphene nanosheets, each being doped with boron and/or nitrogen, and a solvent.

SEOL M, KIM S, SHIN H, PARK S, CHO Y, SEOL M S, KIM S W, SHIN H J, PARK S J, CHO Y C

Layer structure for electronic device, has material layers which are on sides of diffusion barrier layer and diffusion barrier layer includes nano-crystalline graphene layer.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J, SONG H J, NAM S G, CHO Y C, PARK S J, SHIN H J, LEE J H

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S