国家/地区 中国（25）
IPC部 H（12） B（9） C（8）
D（2） G（2）
IPC大类 H01（12） B01（6） C07（5）
B82（4） C01（2） D01（2）
G01（2）
IPC小类 H01L（7） B01J（6） C07C（5）
B82Y（4） H01M（3） C01B（2）
D01F（2） G01N（2） H01G（2）
IPC B01J027/22（4） B82Y030/00（4） H01L021/336（4）
H01L029/16（4） H01L029/78（4） B82Y040/00（3）
H01L021/28（3） H01L029/10（3） C01B031/04（2）
C07C033/20（2） C07C209/36（2） D01F009/21（2）
D01F009/24（2） H01G011/32（2） H01G011/86（2）
发明人 SHI J（25）
公开年 2016（25）
申请年 2016（17）  2015（8） 
专利权人 INST MICROEL.（10） UNIV ZHEJIAN.（4） UNIV TIANJIN.（3） QINGDAO HUAG.（2）
SHENZHEN NEW.（2）

Preparing graphene intelligence comprises material filling, graphite stripping treating, high-pressure dispersion treating and spray-drying.

PAN D, LIU J, WANG F, SHI J, QIAN F

Preparation of graphene skeleton porous nanofiber used for, e.g. energy storage by dissolving water-soluble polymer in water-soluble metal salt or metal oxide nanoparticles aqueous solution, electrospinning, heating, and pickling.

MA C, SHI J, LEE J, CAO E, XU J, LI X

Preparation of high-porosity mesoporous nano-graphene fiber used for e.g. lithium-ion batteries, involves using low-molecular weight thermosetting resin as carbon precursor, preparing ethanol solution, and adding metal salt/organic salt.

MA C, SHI J, LEE J, CAO E, XU J, LI X

Method for reducing metal and graphene contact resistance in graphene FET device, involves providing insulating substrate with metal layer, and evaporating thin metal layer for performing detects treatment process on graphene material layer.

JIN Z, MAO D, PENG S, WANG S, SHI J, ZHANG D

Preparation of patterned graphene comprises forming photoresist layer on hydrophilic substrate surface by photolithography process, filling with oxidized graphene solution, drying, removing photoresist layer and reducing.

JIN Z, PENG S, ZHANG D, SHI J

Preparation of inorganic nanoparticle/graphene three-dimensional porous composite material by loading polystyrene microsphere template with inorganic nanoparticle, mixing with graphene oxide solution to remove solvent, and heat treating.

LI C, LI F, WANG W, XU Z, WANG L, YANG C, DAN J, TENG K, SHI J

Method for preparing graphene field effect transistor, involves transferring graphene material on substrate, preparing source and drain electrodes, performing photolithography followed by applying medium and forming graphene nanobelts.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for preparing metal graphene dual-sided contact structure for graphene electronic device, involves exposing photo-resist material, forming upper layer metal pattern, and forming self-aligned double-metal contact structure of graphene.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for manufacturing graphene field effect transistor, involves providing silicon substrate, forming insulating layer on silicon substrate, followed by forming leakage electrode on insulation layer, and forming graphene-based channel.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Top gate graphene field effect transistor contains semiconductor substrate, insulation layer provided on semiconductor substrate, graphene conductive layer provided on insulating layer and comb-type source/drain contact structure.

JIN Z, PENG S, ZHANG D, SHI J