国家/地区 美国（11） 韩国（8）
IPC部 H（9） B（8） C（6）
IPC大类 H01（8） B32（7） B82（7）
C01（5） B01（2） B05（2）
C23（2） H05（2）
IPC小类 H01L（8） B32B（7） B82Y（7）
C01B（5） B01J（2） B05D（2）
B82B（2） H01B（2）
IPC B82Y030/00（6） B82Y040/00（5） C01B031/02（3）
H01L029/78（3） B01J019/08（2） B32B009/00（2）
C01B031/04（2） H01B001/04（2） H01L021/768（2）
H01L027/04（2） H01L029/76（2） H01L029/786（2）
发明人 SHIN H（11）
公开年 2012（6） 2011（3） 2013（2）
申请年 2011（11）
专利权人 SAMSUNG ELEC.（11） CHOI J（3） SHIN H（3） UNIV SUNGKYU.（3）
SNU R DB FOU.（2） UNIV SEOUL N.（2） UNIV SUNGKYU.（2） UNIV YONSEI .（2）
YOON S（2）

Radio-frequency circuit, has graphene interconnection part for connecting electric components, and trench part formed in lower part of graphene interconnection part and arranged on insulating layer.

SHIN H J, CHOI J Y, JUN S C, KIM W K, YOON H S, OH J Y, LIM J H, SHIN H, CHOI J, JUN S, KIM W, YOON H, OH J, LIM J

Radio-frequency circuit used in semiconductor device, has graphene interconnection portion that connects first electric component with second electric component.

SHIN H J, CHOI J Y, JUN S C, KIM W K, YOON H S, OH J Y, LIM J H, SHIN H, CHOI J, JUN S, KIM W, YOON H, OH J, LIM J

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J

Preparing a graphene shell, comprises forming graphitizing catalyst in three-dimensional form, forming a coating on the graphitizing catalyst, and heat-treating the coating on the graphitizing catalyst in an inert or reductive atmosphere.

CHOI J, SHIN H, YOON S

Transparent electrode, used in e.g. display device and solar cell, comprises graphene on one surface of transparent substrate, where graphene is doped with positive-dopant having specific molecular weight and transmittance variation rate.

YOON S, CHOI W, SHIN H, CHOI J, YOON S M, CHOI W M, SHIN H J, CHOI J Y

Preparing graphene sheet used in e.g. hydrogen storage medium and electrical device, comprises disposing graphitizing catalyst on substrate, disposing polymer on graphitizing catalyst and heat-treating polymer on the graphitizing catalyst.

CHOI J, SHIN H, YOON S

Controlling number of graphene layers to form mono/bilayer graphene, used e.g. in sensor, comprises forming graphene on first surface of first substrate, forming second substrate on second surface of first substrate and irradiating graphene.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Graphene composition, useful in electrical device, preferably e.g. sensor, bipolar junction transistor, field effect transistor and light emitting diode, comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer.

SHIN H, CHOI J, AHN J, JEON C, AHN J R, CHOI J Y, JEON C H, SHIN H J

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J