国家/地区 美国（10） 韩国（7） 欧洲专利局（EPO）（2）
IPC部 H（9） B（7） C（7）
G（2）
IPC大类 H01（9） C01（7） B82（4）
B32（3） B01（2） C23（2）
IPC小类 H01L（9） C01B（7） B32B（3）
B82Y（3） B01J（2） C23C（2）
IPC H01L029/16（7） C01B031/04（5） C01B031/02（4）
H01L021/02（4） H01L029/78（3） H01L029/786（3）
B82Y010/00（2） B82Y030/00（2） B82Y040/00（2）
C01B032/184（2） H01L029/15（2） H01L029/66（2）
发明人 SHIN H（10）
公开年 2014（10）
申请年 2013（7）  2014（3） 
专利权人 SAMSUNG ELEC.（10） SHIN H（3） SNU R DB FO.（2） UNIV SEOUL N.（2）
UNIV SUNGKYU.（2） WOO Y（2）

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Graphene shell used as e.g. hydrogen storage medium, is obtained by forming graphitized catalyst, forming polymeric coating on graphitized catalyst and heat-treating in inert or reduced atmosphere.

CHOI J, SHIN H J, YOON S, SHIN H

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Graphene-layered structure, useful in solar cells, transistor and in transparent electrode, comprises ion implantation layer in silicon carbide thin film, and graphenized silicon carbide surface layer on the ion implantation layer.

SHIN H, CHOI J, AHN J, SEO J

Graphene switching device for use as diode has gate electrode which is provided on gate insulation layer arranged on graphene layer set on insulation layer.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J, LEE J H, PARK S J, BYUN K E, SONG H J, SHIN H C, CHUNG H J, HEO J S

Graphene structure used in transparent electrode for display device or solar cell, comprises graphene doped with dopant, and hydrophobic organic layer on at least one surface of doped graphene.

YOON S, SHIN H, CHOI J, CHOI W, KIM S, LEE Y, CHOI J Y, CHOI W M, KIM S M, LEE Y H, SHIN H J, YOON S M, YOONSUNMI, HEE L

Making graphene laminate used in e.g. LCD, comprises forming graphene on graphitization catalyst film, coating surface of substrate with binder layer composition, contacting composition and graphene, curing composition, and removing film.

SHIN H, CHOI J, HAN G, LEE Y

Field effect transistor comprises graphene channel layer on a substrate, where layer defines slit; source electrode and drain electrode to apply voltages to layer; gate electrode on channel layer; and gate insulation layer.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J, LEE J H, PARK S J, BYUN K E, SONG H J, SHIN H C, CHUNG H J, HEO J S

Fabricating single-layer graphene on silicon carbide wafer used as channels of field-effect transistor array, comprises disposing graphene layers on carbon buffer layer of wafer, and converting buffer layer to single-layer graphene.

WOO Y, YOON S, SHIN H, LEE D, CHOI J, WOO Y S, YOON S M, SHIN H J, LEE D W, CHOI J Y