国家/地区 英国（8） 美国（5） 德国（2） 世界知识产权组织（2）
IPC部 C（6） H（6） G（2）
IPC大类 H01（6） C01（4） C23（4）
IPC小类 H01L（6） C01B（4） C23C（4）
IPC C01B032/186（4） H01L021/02（4） H01L029/16（4）
C23C016/26（3） H01L021/04（2） H01L029/66（2）
发明人 THOMAS S（9）
公开年 2022（9）
申请年 2021（6）  2022（3） 
专利权人 PARAGRAF LTD（8）

Manufacture of light-emitting device comprises forming graphene layer structure on non-metallic substrate, forming first layer of dielectric material on first surface portion of structure, and providing source contact and gate contact.

GUINEY I, GRIFFITHS J, DIXON S, THOMAS S, WALLIS R, GILLIN W P, FENWICK O, HUMPHREYS C J, WENG Z

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Core shell structure reinforced natural rubber composites comprise amine modified nanosilica and graphene oxide, in which the nanosilica and graphene oxide prepares self-assembled hybrid core shell structure and natural rubber matrix.

THOMAS S, KALARIKKAL N, VELAYUDHAN P, PADUVILAN J K

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S

Forming material on graphene layer structure for use in electronic component for biosensing, involves providing graphene layer structure having first portions on non-metallic substrate, and plasma etching first portions of graphene layer structure to remove the out-of-plane material.

GUINEY I, THOMAS S, GLASS H, LEE L Y

Forming graphene on silicon substrate for electronic device, comprises providing silicon wafer having growth surface free of native oxides in reaction chamber, and nitriding growth surface with nitrogen-containing gas with wafer.

DIXON S, GUINEY I, THOMAS S, THOMAS S C S

Method for manufacturing graphene transistor, involves providing substrate having flat surface, where surface comprises insulating region and adjacent semiconducting region, and forming graphene layer structure on surface.

BADCOCK T J, WALLIS R, GUINEY I, THOMAS S

Providing air- and/or moisture-barrier coating on at least portion of two-dimensional material used in electronic device, by e.g. providing substrate having two-dimensional material on it, providing composition comprising inorganic oxide, fluoride or sulfide precursor and doping agent.

GUINEY I, THOMAS S, TYLER M, GLASS H, WALLIS R