国家/地区 美国（13） 德国（5） 英国（5） 中国（3） 世界知识产权组织（2）
IPC部 H（12） B（8） C（4）
IPC大类 H01（12） B82（8） C01（4）
B05（2）
IPC小类 H01L（11） B82Y（8） C01B（4）
H01B（4） B05D（2） B82B（2）
IPC B82Y040/00（6） B82Y030/00（4） C01B031/02（4）
B82Y010/00（3） B82Y099/00（3） H01B001/04（3）
H01L021/02（3） H01L021/336（3） H01L029/06（3）
H01L031/18（3） H01L051/00（3） B05D005/12（2）
B82B003/00（2） C01B031/00（2） C01B031/04（2）
发明人 TULEVSKI G S（13）
公开年 2013（7） 2012（4） 2014（2）
申请年 2012（7）  2010（3）  2011（2） 
专利权人 INT BUSINESS.（13） EGYPT NANOTE.（5） CHANDRA B（2） TULEVSKI G S（2）

Forming transparent conductive electrode, used to make organic LED device, comprises providing and doping a blanket layer of graphene with single electron oxidant consisting of metal organic complex, pi-electron acceptor or silver salt.

CHEN T, HANNON J B, LI N, OIDA S, SADANA D K, TULEVSKI G S

Organic LED (OLED) device used for e.g. display, lighting has planar sheet of doped graphene located on exposed surface of substrate, and an interfacial layer located directly on exposed surface of planar sheet of doped graphene.

CHEN T, HANNON J B, LI N, OIDA S, SADANA D K, TULEVSKI G S, SALDANHA D K, CHEN Z

Forming solar cell involves forming graphene layer on metallic film, then forming polymethyl-methacrylate layer on it; disposing the layers on semiconductor portion; and exposing graphene layer and forming conductive layer on it.

BOL A A, KASRY A, MAAROUF A, MARTYNA G J, NEWNS D M, NISTOR R A, TULEVSKI G S

Doping cerium(IV) salt with carbon material comprising carbon nanotubes or graphene, useful for producing a manufacturing article, comprises dissolving cerium(IV) salt, which include e.g. cerium(IV) salt of nitric acid with carbon material.

AFZALIARDAKANI A, CHANDRA B, TULEVSKI G S, AFZALIARAKANI A

Combining cerium salt dissolved in solvent comprising water with carbon material having carbon nanotube or graphene at temperature sufficient to oxidize material to produce non-conducting oxidized material, useful to form an article.

AFZALIARDANKANI A, CHANDRA B, TULEVSKI G, AFZALIARDAKANI A, TULEVSKI G S

Apparatus for doping graphene or carbon nanotube thin-film field-effect transistor device, has thin-film field-effect transistor device on substrate, and contact metal on doped channel region of transistor device.

AFZALIARDAKANI A, CHANDRA B, TULEVSKI G S, BHUPESH C

Doping of graphene and nanotube thin-film field-effect transistor device for electronic device, involves selectively applying dopant to channel region of thin-film field-effect transistor device to improve electronic mobility.

AFZALIARDAKANI A, CHANDRA B, TULEVSKI G S

Method of doping graphene thin film transistor and nanotube field effect transistor unit, involves selectively introducing dopant on metal contact portion of graphene thin film transistor and nanotube field effect transistor unit.

AFZALIARDAKANI A, CHANDRA B, TULEVSKI G S, XIA F

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Optical sensor useful for determining makeup of any analyte that acts to shift peak surface plasmon resonance (SPR) of graphene, comprises a substrate, and a sensing surface comprising a graphene layer located on the substrate.

AFZALI A, BOL A A, KASRY A, TULEVSKI G S