国家/地区 中国（17）
IPC部 H（13） C（7）
IPC大类 H01（13） C23（4） C30（3）
IPC小类 H01L（13） C23C（4） C30B（3）
IPC H01L021/205（4） C23C016/26（3） H01L021/324（3）
C30B025/18（2） C30B029/02（2） H01L021/02（2）
发明人 WANG D（17）
公开年 2013（17）
申请年 2012（17）
专利权人 UNIV XIDIAN（15）

Preparation of graphene/titanium dioxide composite photocatalyst by dissolving graphene oxide in ethanol solution, adding titanium dioxide, heating, washing using water, drying, soaking in concentrated hydrochloric acid, sealing and drying.

SHI X, WANG D, WANG L, WANG Z, YUAN R

Patterned graphene forming method, involves doping semiconductor silicon substrate with carbon element that is formed with patterned carbon-containing layer, where patterned carbon-containing layer is formed as patterned graphene layer.

WANG D, ZHANG H

Method for laser-assisted lossless transfer of chemical vapor deposition graphene, involves growing gallium nitride and copper layers on sapphire substrate in sequence, depositing graphene on copper layer in chemical vapor deposition mode.

HAO Y, NING J, HAN D, YAN Y, WANG D, ZHANG J, CHAI Z

Method for removing ultrasonic-assisted graphene photoresist, involves injecting pure acetone into graphene sample, analyzing and cleaning sample, and rinsing cleaned sample in absolute ethyl alcohol followed by washing, drying and storing.

HAN D, CHAI Z, NING J, ZHANG J, HAO Y, YAN Y, WANG D

Method for stripping graphene, involves fixing graphite between upper substrate and lower substrate, treating resultant material in ultrasonic generator, and separating graphene.

NING J, ZHANG J, HAN D, CHAI Z, HAO Y, WANG D, YAN Y

Method for performing non-contact-type Hall effect measurement of graphene migration rate of semiconductor current carrier, involves triggering projection position of electromagnetic wave, and carrying out multi-point measuring.

HAO Y, HAN D, WANG D, ZHANG J, NING J, CHAI Z, YAN Y

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J

Preparation of side gating graphene field-effect transistor structure involves placing copper foil in reaction chamber, vacuumizing reaction chamber, performing thermal annealing on copper foil, and growing graphene.

WANG D, HAN D, ZHANG J, HAO Y, CHAI Z, NING J, YAN Y

Method for laminated transferring for graphene transparent conducting thin film that is utilized for reducing polymethyl methacrylate residue photoresist, involves preparing single-layer graphene by chemical vapor deposition epitaxy.

ZHANG C, ZHANG J, HAO Y, CHAI Z, WANG D, YAN Y, NING J, HAN D

Process for annealing zinc oxide substrate transfer graphene, involves adopting high-temperature annealing mode, repairing graphene defect generated during substrate transfer process, and removing impurities during transfer process.

WANG D, ZHANG J, HAO Y, HAN D, NING J, YAN Y, CHAI Z