国家/地区 中国（13）
IPC部 H（9） C（3）
IPC大类 H01（9） C01（2） C04（2）
IPC小类 H01L（8） C01B（2） C04B（2）
H01Q（2）
IPC H01L021/336（3） H01L029/786（3） C01B031/04（2）
C04B041/50（2） C04B041/85（2） H01L021/04（2）
H01L027/144（2） H01Q001/22（2）
发明人 WEI C（13）
公开年 2013（13）
申请年 2013（12） 
专利权人 CHINA ELECTR.（6） UNIV XIDIAN（6） 13TH RES INS.（3）

Antenna integrated PIN junction graphene terahertz detector has preset ohmic contact electrode and specific ohmic contact electrode that are arranged on P-region and N-region of graphene PIN junction.

FENG Z, SONG X, WANG J, WEI C, XING D, ZHANG L, ZHANG X, YANG D, LIANG S, HE Z

Method for preparing graphene/conductive polymer anode that is utilized for manufacturing microbial fuel cell, involves mixing conductive polymer monomers and aqueous suspension of graphene oxides and stirring mixture.

CHEN Y, FENG C, LV Z, WEI C, XIE D

Antenna integrated graphite allylprodine positive-intrinsic-negative junction terahertz detector, has graphene positive-intrinsic-negative junction whose P-region and N-region are respectively provided with two ohmic contact electrodes.

WANG J, WEI C, XING D, YANG D, ZHANG L, ZHANG X, FENG Z, SONG X, LIANG S, HE Z

Method for manufacturing semiconductor device, involves forming grid medium layer between graphene-containing layer and exposed seed layer using photo resist as mask and forming gate metal on gate dielectric medium to remove photo-resist.

WEI C, LI J, LIU Q, FENG Z, WANG J, HE Z

Formation method of horizontal graphene PIN junction used in semiconductor device, involves removing corrosion transferring graphene on shielding layer and shielding layer, and obtaining horizontal graphene PIN junction.

WANG J, LI J, LIU Q, WEI C, FENG Z, HE Z

Method for forming horizontal graphene PN junction on thin film crystal of semiconductor device, involves preparing layer of graphite or graphene on silicon carbide substrate, and providing doped graphite alkene with n-type doped grapheme.

WANG J, LI J, LIU Q, WEI C, FENG Z, SONG X, HE Z

Graphene wave-guide structure for terahertz wave modulation amplifier, has wave guide core layer located at upper middle part of substrate, and graphite alkene layer whose upper and lower parts are connected with ohmic contact electrode.

WANG J, WEI C, FENG Z, XING D, ZHANG L, YANG D, LIANG S

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Preparing large-area graphene based on nickel film annealing and chlorine reaction comprises e.g. growing carbon layer on substrate, growing 3C-silicon carbide heteroepitaxial film, hydrogen etching, depositing nickel layer and annealing.

GUO H, LEI T, WEI C, ZHANG F, ZHANG Y

Manufacture of side-grid graphene transistor involves preparing film having patterns, heating, obtaining carbon film, placing in buffer solution, heating with copper film, evaporating, depositing, photoetching and drying.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG K, HU Y