国家/地区 中国（29）
IPC部 C（11） B（9） G（9）
H（8）
IPC大类 G01（8） H01（7） B01（5）
C07（3） C01（2） C02（2）
C09（2） H05（2）
IPC小类 G01J（6） B01D（3） C07C（3）
H01M（3） B01J（2） C01B（2）
C02F（2） G01N（2） H01L（2）
IPC G01J005/24（5） B01D067/00（2） B01J035/10（2）
H01M004/38（2） H01M004/587（2） H01M004/62（2）
发明人 WU P（29）
公开年 2021（29）
申请年 2021（18）  2020（8）  2019（3） 
专利权人 BEIJING NORT.（6） CAS DALIAN C.（2） UNIV NANJING.（2） WUXI DONGHEN.（2）

Method of preparing multilayer structure infrared micro-bridge detector, involves depositing third metal interconnection layer and second dielectric layer, and etching third metal interconnection layer into second patterned electrode structure to form absorber plate.

PAN H, WU P, DI G

Mixed plasma optical modulator for realizing high-speed and short-distance optical communication, has double-layer graphene that realizes modulation of optical waveguide signal under driving of electric signal of metal electrode.

WU P, PEI S, LI J, KONG X

Thermosymmetric infrared detector for use in e.g. mobile phone application field, has column-level analogue front end circuit for performing trans impedance amplification to two paths of current and outputs as output voltage.

PAN H, WU P, DI G

Infrared focal plane detector for mobile phone application field, has column-level analogue front end circuit that obtains two paths of current according to bias voltages, performs trans-impedance amplification to difference of generated two paths of current and outputs as output voltage.

WU P, PAN H, DI G

Complementary metal oxide semiconductor (CMOS) process based infrared micro-bridge detector for mobile phone application field, has column level analog front end circuit that performs transimpedance amplification on difference between two generated currents to output as output voltage.

PAN H, WU P, DI G

Complementary metal-oxide-semiconductor (CMOS) infrared detector for use in monitoring market, has column-level analog front-end circuit that obtains paths of currents according to main and sub bias voltages, and performs transimpedance amplification on difference between paths of generated current.

WU P, PAN H, DI G

Infrared detector with multilayer structure based on complementary metal-oxide semiconductor technology used in mobile phone application field, has columnar structure directly electrically connected with supporting base in reflecting layer and corresponding beam structure.

PAN H, WU P, DI G, ZHAI G

Preparing hybrid graphene magnetic catalytic particle electrode useful for e.g. three-dimensional electro-Fenton degradation comprises ultrasonicating montmorillonite and sucrose, mixing black solid with ethanol, granulating and calcining.

CAI N, WU P, BAI G, GUO P

Noble metal/graphene complex film useful in thin film catalyst for organic dehydrogenation reactions, alcohol reforming hydrogen production, or hydrogen-oxygen complex reactions comprises loading noble metal on graphene complex film.

LI H, CHENG C, HUANG R, WANG B, ZHANG H, WU P, HONG H

Method for preparing manganese-doped zinc oxide dilute magnetic semiconductor thin film, involves controlling direct current (DC) magnetron sputtering device, coating substrate, and cooling to room temperature to obtain manganese-doped zinc oxide diluted magnetic semiconductor film.

LIU F, WU P, HONG B, ZHAO W