国家/地区 中国（9） 韩国（7） 美国（7） 日本（2）
IPC部 H（9） B（6） C（3）
IPC大类 H01（9） B82（5）
IPC小类 H01L（9） B82Y（5）
IPC H01L029/78（6） H01L021/336（5） B82Y099/00（4）
H01L029/10（3） H01L029/786（3） B82Y030/00（2）
B82Y040/00（2） H01L029/06（2） H01L029/772（2）
H01L029/775（2） H01L031/18（2） H01L051/05（2）
H01L051/30（2）
发明人 YANG H（13）
公开年 2012（13）
申请年 2011（10）  2012（2） 
专利权人 SAMSUNG ELEC.（7） CHINESE ACAD.（2） SNU R DB FOU.（2） UNIV SEOUL N.（2）
UNIV ZHEJIAN.（2）

Preparation of graphene oxide microsphere by immersing solid substrate having hydrophobic surface in mixed organic solvent, injecting graphene oxide aqueous solution, and completely dissolving graphene oxide droplets in organic phase.

ZHANG S, CHEN S, SONG Y, YANG H, ZHANG X

Graphene electronic device e.g. back gate FET, has graphene channel layer extending between metals, and source electrode and drain electrode provided on edges of channel layer and formed to have thickness of specific range.

HEO J, CHUNG H, SEO S, LEE S, YANG H, HEO J S, CHUNG H J, SEO S A, LEE S H, YANG H J, JEONG H J, HUH J, JUNG H

Nanocomposite material, useful in the fields of mechanical seal and lubrication, comprises graphene or graphene derivative, polytetrafluoroethylene and glass fiber.

FAN X, LUO Z, XU Y, YANG H

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Graphene electronic component e.g. radio frequency (RF) transistor, has gate electrode that is arranged on protective layer which is formed identical to shape of graphene channel layer between source electrode and drain electrode.

CHUNG H J, HEO J S, YANG H J, SEO S A, LEE S H, CHUNG H, HEO J, YANG H, SEO S, LEE S

Graphene substrate comprises a substrate, metal oxide film on the substrate, and graphene layer on metal oxide film in which the concentration of oxygen in metal oxide film is gradually reduced from the substrate towards the graphene layer.

CHUNG H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, SEO S A, LEE S H, HEO J S, YANG H J

Graphene electronic device e.g. field effect transistors, has graphene channel layer which is formed on gate insulating layer and source and drain electrodes are located on graphene channel layer.

HEO J, SEO S, LEE S, CHUNG H, YANG H, SEO S A, JUNG H, HUH J, HEO J S, LEE S H, CHUNG H J, YANG H J

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J

Microflow channel, has crystal support surface provided with atom stages, and graphene covering layer utilized for covering support surface, where atom stages of support surface and graphene covering layer form space.

GONG X, LIU Z, XU G, XU K, YANG H, ZHONG H

Graphene electronic device e.g. FET comprises a substrate configured to act as a gate electrode, a layer of gate oxide disposed on the substrate, a layer of hydrophobic polymer, a graphene channel layer, and a source and drain electrodes.

YANG H, SEO S, LEE S, CHUNG H, HEO J, YANG H J, SEO S A, LEE S H, CHUNG H J, HEO J S