国家/地区 中国（33）
IPC部 C（33）
IPC大类 C23（33） C01（7） H01（5）
C25（4） G01（4） B05（3）
C30（3） B82（2） G21（2）
IPC小类 C23C（33）
IPC C23C016/26（33）
发明人 ZHANG J（33）
公开年 2018（7） 2017（5） 2022（5） 2020（4） 2021（4） 2013（3） 2019（2）
申请年 2017（10）  2020（6）  2021（4）  2012（3）  2016（2）  2018（2）  2019（2）  2022（2） 
专利权人 UNIV PEKING（7） UNIV XIDIAN（6） BEIJING GRAP.（5） LANZHOU CHEM.（3）
CHINA NUCLEA.（2） JIATE SEMICO.（2） UNIV SHANGHA.（2） UNIV XIAMEN（2）
YANGTZE OPTI.（2）

Controllable preparation method of palladium-based hydrogen sensitive material, involves loading palladium nano-particles on graphene film by self-reduction deposition method at room temperature and immersing film on substrate in chemical plating solution.

LIU H, ZHANG P, LU Z, ZHANG J, CHEN Z, GUO J, YANG C, CHENG Q, LEI H, SONG T, LIN W, CAO C, CAO X, LIU M, PING X

Preparing flexible strain sensor based on vertical graphite comprises adding flexible substrate fluorocrystalline mica sheet into magnetron sputtering apparatus, adding prepared interdigital electrode substrate, passing methane/hydrogen/argon mixed gas and excapsulating with polydimethylsiloxane.

ZHANG J, WANG J, ZHANG L, LUO K, WANG Q

Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.

WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C

Preparing ultra-thin nickel radiation source useful to prepare Schottky junction type laminated beta-radiation cell, involves dripping nickel source on surface polymethyl methacrylate/graphene film and arranging nickel nano particles in oriented mode along direction of magnetic line.

WANG X, WANG L, SU C, FENG H, CHEN Z, ZHANG J, LI P, WU W, YANG Y, ZHOU C

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Preparing clean double-layer and few-layer graphene film, comprises placing substrate in atmosphere containing first oxidizing gas, annealing, placing substrate in reaction mixed gas containing reducing gas, a carbon source and a second oxidation gas, and heating to growth temperature.

LI G, ZHANG Y, LIU X, ZHANG M, GAO X, ZHANG J, PENG H, LIU Z

Improving cleanliness of graphene film comprises subjecting graphene film to high-temperature treatment in vacuum environment, and carrying out chemical vapor deposition method.

CHEN H, XUE R, LIU X, ZHANG J, LI G, PENG H, LIU Z

Controllable multifunctional broadband terahertz wave polarization conversion metamaterial comprises gold and graphene, where the gold and graphene form square ring and side view structural materials of the unit structure are gold.

ZHANG K, KONG W, ZHANG J

Device used for producing graphene includes main heating unit, auxiliary heating unit, air supply unit, pressure reducing component, bottom plate, containing space, heating space and cavity body.

ZHANG J