国家/地区 韩国（14）
IPC部 B（14）
IPC大类 B01（14） C01（14） B82（5）
H01（3） C08（2） C23（2）
IPC小类 B01J（14）
IPC B01J019/12（14）
发明人 OH I K（3） KIM H（2） KIM T（2）
YOON Y H（2）
公开年 2014（14）
申请年 2012（7）  2013（5） 
专利权人 KOREA ADVANC.（3） GRAPHENEALL .（2） SAMSUNG ELEC.（2）

Apparatus useful for manufacturing graphene, comprises source decomposition unit to decompose carbon source set on one side of a forming chamber, and a feeding unit to supply catalyst metal via source decomposition unit and forming chamber.

MOON J, KIM T, CHOI M, JUNG M

Hydrogen treated graphene surface having specified band gap and hole mobility.

HONG J I, SON J Y, HONG J, SON J, SUN Z

Manufacture of flaky graphite used for forming flaky graphite-resin composite, involves immersing carbon material having graphene laminated structure in liquid, irradiating electromagnetic waves, heating and slicing carbon material.

INUI N

Apparatus for producing graphene, comprises plasma arc generation unit to generate plasma arc on substrate surface, carbon source supply unit to supply carbon source and laser irradiation unit to irradiate laser and dissociate carbon atoms.

YEONG L M, LEE M Y

Thermal-plasma manufacture of graphene, involves providing thermal plasma torch inside reactor, injecting methane/hydrogen and argon/hydrogen through different paths in torch nozzle, and generating thermal plasma by heating torch.

PARK D W, KIM T, BAEK J

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Formation of graphene quantum dot used for e.g. radiator, involves applying microwaves to graphene oxide material, oxidizing reduced graphene oxide product, applying microwaves to graphene oxide product, and processing product.

YOON Y H

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Formation of graphene oxide used for e.g. secondary battery, involves oxidizing graphite using acid, recovering acid from primary reaction product, and then oxidizing graphite using recovered acid.

YOON Y H

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J