国家/地区 美国（9） 日本（5） 世界知识产权组织（5） 中国（4） 欧洲专利局（EPO）（4） 韩国（3）
IPC部 B（10）
IPC大类 B32（10）
IPC小类 B32B（10）
IPC B32B009/00（10）
发明人
公开年 2015（10）
申请年 2014（4）  2015（4）  2013（2） 
专利权人 INT BUSINESS.（2）

Multilayer structure of capacitor, has first and third layers each form one of two dee-trodes and comprise pyrolysed carbon nanomembranes or layers of graphene, and second layer is dielectric comprising car-bon nanomembranes.

BEYER A, GOLZHAUSER A, PENNER P, ZHANG X, GOELZHAEUSER A

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Use of reduced graphene oxide laminate membrane as barrier material in which reduced graphene oxide is formed from reduction of graphene oxide with reducing agent.

RAVEENDRANNAIR R, SU Y, GEIM A, RAVEENDRAN N R

Solid state device structure for graphene device for use in microelectronics application, has single crystalline graphene monolayer placed on substrate including surface area of greater than specific range.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Transfer film used for manufacturing transparent conductive laminate, consists of silicon thin film as mold release layer, thin metal film and transparent conductive film including graphene, sequentially formed on base film.

SHIMADA N

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Carbon composite material used for activated carbon-based electrodes for supercapacitor has portions of respective any two adjacent graphene sheets (GSs), oriented parallel with one another.

XIE J, WANG M

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Composition, used in a phase change material which is useful e.g. as thermal conductivity substrate for flexible graphene electronic devices, as electrode in battery, and in a thermal storage device, comprises galactitol and mannitol.

DA SILVA A K, FLEMING E, SHI L, BIELAWSKI C W, RUOFF R S, WEN S, JI H, PETTES M, PAUL A, PAEK E, PAK A J, SELLAN D P, FLAMING E, DA SILVAA A K