国家/地区 欧洲专利局（EPO）（10）
IPC部 B（10）
IPC大类 B82（10） C01（10） H01（6）
C23（4） C03（2） C30（2）
IPC小类 B82Y（10）
IPC B82Y040/00（10）
发明人
公开年 2018（7） 2017（3）
申请年 2017（10）
专利权人

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Preparation of multi-doped graphene involves mixing metal-based dopant and at least one organic-based dopant to prepare doping solution, stacking graphene layer on substrate, and doping graphene layer with doping solution.

JUNG M, BYUN N, MOON J, MYNGHEE J, NAMI B, JINSAN M, WEN Z

Graphene oxide composition useful in a composite composition, comprises sheets of graphene oxide crosslinked with one another via metal cations in a specified oxidation state.

TIAN Z R, TURGOT H

Production method for producing graphene on copper substrate, involves continuously monitoring temperature of copper sheets and heating copper sheets to specified temperature for predetermined time using electromagnetic induction heater.

HABERLE TAPIA P, ORELLANA GOMEZ C, HABERLE T P, ORELLANA G C, HAEBERLE TAPIA P, HAEBERLE T P

Production of graphene covalently functionalized with organic molecule for manufacture of e.g. electronics involves bombarding surface of system containing graphene and non-metallic substrate with beam of noble gas ions and heating.

ACEITUNO BUENO R, MARTINEZ RUIZ J I, LUCCAS R F, LOPEZ FAGUNDEZ M F, MOMPEAN GARCIA F, GARCIA HERNANDEZ M D M, MARTIN GAGO J A, BUENO R, RUIZ J I, FAGUNDEZ M F, GARCIA F, HERNANDEZ M D M, GAGO J A

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Graphene and graphene oxide production involves obtaining quantity of carbon rich materials in solid state, mixing carbon rich material with solvent, surfactant, and additive for forming mixture, and then conducting mixture.

ZENG T, QI K, QI K Z

Polymer-graphene composite used for forming composition, comprises graphene and polymer bonded to graphene through functional group containing carbonyl group and alkylene group.

KIM Y W, KWON W J, KIM Y, KWON W

Electrical conductor for use in electronic devices, has first conductive layer that includes graphene which is p-doped with p-type dopant, formed in first surface facing second conductive layer and second surface.

SOHN H, SHIN W, WOO Y S, SUN X, XIN Y, YEO R, SOHN H S