国家/地区 美国（21） 日本（12） 中国（10） 世界知识产权组织（10） 欧洲专利局（EPO）（7） 韩国（7） 印度（3） 加拿大（2） 西班牙（2）
IPC部 B（22）
IPC大类 B82（22） H01（17） C01（10）
B32（8） B05（7） C23（3）
B29（2） C08（2） C25（2）
G06（2）
IPC小类 B82Y（22） H01L（13） C01B（10）
B32B（8） H01B（8） B05D（7）
C23C（3） H01G（3） B29C（2）
B82B（2） C25D（2） H01M（2）
IPC B82Y099/00（22）
发明人 ADACHI K（2） AHN J（2） BAE S（2）
BAE S K（2） HONG B（2） HONG B H（2）
KAWANAKA S（2） KIM H（2） KIM H K（2）
MIYATA T（2）
公开年 2011（22）
申请年 2010（11）  2011（10） 
专利权人 SONY CORP（2） TOSHIBA KK（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Making graphene involves making graphite oxide substrate by exfoliating graphene oxide sheet in aqueous solution, neutralizing and centrifuging the solution, and evaporating/spin coating the solution on material; and exposing to laser beam.

SOKOLOV D A, SHEPPERD K R, ORLANDO T M

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Graphene tape useful as electrode in a battery is free-standing, and has specific surface area, and has specific electrical conductivity.

KORKUT S, MILIUS D L, ROYMAYHEW J D, DABBS D M, AKSAY I A

Composition useful in electrochemical energy storage devices, comprises a polymeric material containing active material particles, and graphene material particles forming a graphene network.

LU W, BUETTNERGARRETT J, KRYSIAK M

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Electrode material useful in a capacitor cell and a secondary battery cell, comprises a powder having a surface coating or deposits of metal oxide, and a carbon powder e.g. graphite, graphene, carbon microfibers, and carbon nanofibers.

SEYMOUR F W

Magnetic material for information storage media comprises graphene nanodot or graphene nanoribbon containing two dimensional bipartite lattice of carbon atoms including first and second sublattice of carbon atoms having specific spin state.

LIU F

Transistor e.g. field effect type graphene transistor has source electrode that is connected to source side end of graphene film with schottky contact.

KAWANAKA S, ADACHI K, MIYATA T, TSUJII H, TOMIYE K

Making graphene sheet-carbon nanotube film composite structure involves applying dispersed solution including solvent and functionalized graphene sheet on surface of carbon nanotube film structure; and removing the solvent.

ZHANG L, JIANG K, ZHOU R, FAN S, ZHANG L N, ZHOU R F, FAN F Y

Transistor comprises source and drain electrodes, a graphene film formed between source electrode and drain electrode having first and second regions, and a gate electrode formed on graphene film via gate insulating film.

MIYATA T, ADACHI K, KAWANAKA S, NAKAHARAI S, NAKABARAI S