国家/地区 韩国（45）
IPC部 B（45）
IPC大类 B01（45）
IPC小类 B01J（45）
IPC C01B031/02（45）
发明人 CHOI I S（5） HONG B H（5） LEE K J（5）
CHOI J（4） CHOI J Y（4） KIM K H（4）
SHIN H（4） HONG B（3） SHIN H J（3）
AHN J（2） BONG H（2） CHA S W（2）
CHO K（2） CHOI I（2） CHOI S Y（2）
公开年 2013（13） 2012（12） 2014（7） 2011（4） 2015（3） 2016（2）
申请年 2012（18）  2011（7）  2010（5）  2013（5）  2014（5）  2016（3） 
专利权人 HANWHA TECHW.（7） SAMSUNG ELEC.（7） SAMSUNG TECH.（7） KOREA ADV IN.（6）
UNIV SUNGKYU.（5） KOREA ADVANC.（4） SRC CORP（4） UNIV SUNGKYU.（4）
HANWHA AEROS.（3） UNIV SUNGKYU.（3） CENT ADVANCE.（2） HONG B（2）
LG ELECTRONI.（2） TOKYO ELECTR.（2）

Producing thin film graphene oxide-bonded metal foil current collector for battery or supercapacitor, comprises preparing graphene oxide gel, dispensing and depositing layer of gel onto primary surfaces of foil, removing and heat treating.

ZHAMU A, LIN Y, JANG B Z

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Manufacturing graphene, comprises manufacturing superimposed body by overlapping the stacked thin film made of a metal catalyst layer; and preparing graphene on a metal catalyst layer by performing a chemical vapor deposition.

CHO K, BONG H

Production of doped graphene pattern during manufacture of pn-diode, involves supplying n-type carbon precursor on substrate, forming amorphous carbon pattern by irradiating electron beam or ion beam to precursor and heat-treating.

BAE D J, KIM K S, LEE I B

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H