国家/地区 日本（86）
IPC部 C（86）
IPC大类 C01（86） H01（84） B82（41）
C23（16） C09（14） B01（11）
H05（10） C08（8） B32（6）
G01（5） B05（4） C07（4）
C25（4） B29（3） C03（3）
IPC小类 C01B（86）
IPC C01B032/18（86）
发明人 TAMAKI E（7） SAKAI T（5） JIPPO H（4）
KAJITA A（4） KAWASAKI M（4） KUBOTA Y（4）
MATSUMOTO T（4） MIHASHI F（4） MITSUHASHI F（4）
MIYAZAKI H（4） TATENO Y（4） TODORIKI H（4）
TODOROKI H（4） UENO M（4） YONEDA Y（4）
公开年 2017（30） 2015（22） 2014（9） 2013（7） 2018（6） 2012（4） 2016（3） 2020（2）
申请年 2016（24）  2013（16）  2015（14）  2014（13）  2012（6）  2017（6）  2018（2）  2019（2） 
专利权人 SEMICONDUCTO.（9） TORAY IND IN.（8） FUJITSU LTD（6） TOSHIBA KK（6）
TOKYO ELECTR.（5） NAT INST ADV.（4） SUMITOMO ELE.（4） UNIV TOHOKU（4）
GRAPHENE PLA.（3） TODORIKI H（3） BOEING CO（2） DOKURITSU GY.（2）
GRAPHENE PLA.（2） GUO S（2） LG CHEM CO L.（2） LG CHEM LTD（2）
NAT INST MAT.（2） NEC CORP（2） NOMOTO K（2） OZKAN C S（2）

Structure useful in sliding member and connector, comprises structure in which nanocarbon material is arranged on surface of metal.

KAZUOMI S, KAZUHIRO T, YASUHIRO Y, MAYUMI K, RYOTA Y, SATO K, TOKUNAGA K, YUZUHARA Y, KOSAKA M, YUGE R

Electromagnetic wave absorbing material used for removing electromagnetic wave noise, is prepared by covering surface of carbon material with carbon nanostructure having graphene, and carbon nanostructure does not contain metal element.

FURUBAYASHI H, MORI M, IKEDA T, KANO S

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Silver/graphene oxide composite used for conductive material, comprises sheet-shaped silver/graphene oxide composite in which silver nanoparticles are intercalated between layers of graphene oxide.

NATSUKI J

Anisotropic etching of graphene used as electronic material, involves generating hydrogen plasma using microwave plasma, and anisotropically etching graphene using generated hydrogen plasma.

IFUKU R, MATSUMOTO T

Graphene nano-ribbon for e.g. magnetoresistive device, has zigzag-type edge structure in both ends of width direction, and in which one edge portion comprises methyl group and boron, and another edge portion comprises methyl group/nitrogen.

JIPPO H, SATO S

Fluorinated graphene oxide for e.g. super capacitor electrode, has reduced amount of nitrogen and boron.

KASHIWAKURA W, MOGI A

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Preparation of graphene in formation of graphene film on insulated substrate, involves providing oxidation mild atmosphere, and growing graphene in substrate in pressure-reduced atmosphere by vapor phase growth method.

KANEKO S, KATO C, TANAKA S, OZAWA T, YASUHARA S

Graphene structure for use in a semiconductor device, comprises a multilayer graphene that is laminated with graphene sheets, where three interlayer materials are presented between the graphene sheets of the multilayer graphene.

MIYAZAKI H, YOSHIDA T, KATAGIRI M, YAMAZAKI Y, SAKAI T