国家/地区 韩国（10）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B032/184（10）
发明人 AHMED M（2） IACOPI F（2） MANCEVSKI V（2）
VLADIMIR M（2）
公开年 2013（2） 2021（2）
申请年 2011（2）  2020（2） 
专利权人 UNIV GRIFFIT.（2） UNIV SYDNEY .（2） UNIVERSAL MA.（2）

Pellicle used for reticle for extreme-UV exposure, comprises pellicle film through which extreme-UV rays transmit and support frame for supporting pellicle film, where pellicle film comprises multilayer thin film structure.

KIM Y H, KIMYONGHWAN

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O