国家/地区 美国（27）
IPC部 C（27）
IPC大类 C01（27）
IPC小类 C01B（27）
IPC C01B032/186（27）
发明人 KIM S（2） LEE E（2） LI Y（2）
LI Z（2） MOLOKANOVA E（2） THOMAS S（2）
WANG H（2） YANASE M（2） YANASE Y（2）
YOON J（2）
公开年 2016（6） 2017（5） 2022（4） 2015（3） 2018（3） 2020（3） 2021（2）
申请年 2015（6）  2017（5）  2014（3）  2016（3）  2021（3）  2020（2）  2022（2） 
专利权人 SAMSUNG ELEC.（3） SHINETSU CHE.（2） SHINETSU CHE.（2） UNIV CALIFOR.（2）

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Strain engineered material for valley splitter device, comprises graphene sheet having array of wrinkles induced by deformations in graphene sheet, where deformations are formed by lattice of underlying nanostructures on substrate, periodically varying field distribution has field magnitude minima.

TEAGUE M L, WANG J, HSU C, YEH N

Creating nanopore on membrane, fabricating nanopores on membrane for use in two-dimensional membrane, involves fabricating mask with nano-tunnel, placing mask over membrane, bombarding mask with ions, and bombarding membrane with ions passing through nanotunnel.

SHAO L

Pellicle film used for preventing dust from adhering to photomask or reticle, comprises layers laminated to each other and/or layers provided with one or more openings.

TAKADA N, SEKI K, KODERA Y, SEKIGAZUNORI, YUTAKA G

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S

Manufacturing graphene electrode, comprises e.g. forming carbon source on substrate, forming photoresist layer on carbon source, exposing photoresist layer with mask, developing photoresist layer after exposure and forming metal layer.

WANG H

Pellicle film for pellicle used as dust guard in photolithography during manufacture of e.g. semiconductor device, has main layer made of single crystal silicon, and graphene provided on both sides of main layer.

YANASE Y, YANASE M

Sensor and device useful for detecting ammonia gas having high sensitivity, high selectivity, fast saturation, and fast recovery time, comprises board, graphene sheet positioned on board, and copper oxide nano particle on graphene sheet.

LEE K B, NAM Y, LEE Y, SIMBALANKO O, NAM Y S, LEE Y H, TSYMBALENKO O

Graphene wiring structure for use in semiconductor device, has multilayer graphene formed on insulating film, where average particle diameter of graphene crystals is larger than width of multilayer graphene.

MIYAZAKI H, SAKAI T, NISHIDA Y, YOSHIDA T, YAMAZAKI Y, KATAGIRI M, SAKUMA N, SAKUMA H