国家/地区 世界知识产权组织（18）
IPC部 C（18）
IPC大类 C01（18）
IPC小类 C01B（18）
IPC C01B032/188（18）
发明人 CIOCHON P（2） KOLODZIEJ J（2） VEERASAMY V（2）
VEERASAMY V S（2）
公开年 2011（3） 2015（3） 2021（3） 2012（2） 2017（2）
申请年 2020（3）  2009（2）  2011（2）  2012（2）  2017（2）  2022（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2） UNIV JAGIELL.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Obtaining a silicon carbide (SiC)-graphene surface composite with controlled surface morphology for use in e.g., electronics by subjecting SiC substrate, after initial preparation, to annealing in beam of silicon atoms and cooling.

CIOCHON P, KOLODZIEJ J

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S

Laminate used for electronic device, comprises graphene film and base portion comprising silicon carbide, and has ion mass distribution in stack depth direction obtained by using bismuth ions as primary ions and cesium ions as sputter ions.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Manufacturing method for nano structure antireflection film, involves forming antireflection film using graphene as growth substrate, after forming hexagonal graphene honeycomb lattice on silicon dioxide layer.

ZHA G

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H