国家/地区 中国（11） 世界知识产权组织（2）
IPC部 C（11） H（3）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C01B032/188（11）
发明人 CHENG X（2） LIU X（2） SUN L（2）
YANG Z（2） YU F（2） ZHANG J（2）
ZHANG Y（2） ZHAO X（2）
公开年 2017（11）
申请年 2017（7）  2016（4） 
专利权人 UNIV SHANDON.（2）

Preparation of graphene-carbon nanotube composite structure used in device for e.g. electron emission by growing carbon nanotubes on substrate with catalytic element based on plasma enhanced chemical vapor deposition, and growing graphene.

DENG S, GUO C, ZHANG Y, XU N, CHEN J

Preparing large-area regular epitaxial graphene doped with metal atoms comprises e.g. taking monocrystal silicon carbide substrate as growth substrate, heating the monocrystal silicon carbide sample and degassing.

HU T, MA F, XU K, MA D, LIU X, ZHANG X

Growing patterned graphene comprises forming nickel layer on the surface of substrate for providing growth substrate of graphene, covering surface patterning template on the surface of nickel layer and generating graphene pattern.

ZHANG D, JIN Z, SHI J, PENG S, HUANG X, YAO Y

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Growing large-domain graphene by using hexagonal boron nitride as a seed involves providing substrate, dissolving hexagonal boron nitride in solvent, and then stirring obtained mixture ultrasonically treating the boron nitride particles.

YU F, ZHANG J, YANG Z, SUN L, LI Y, CHENG X, ZHAO X

Preparation of graphene involves placing insulating substrate in mixed solution of concentrated sulfuric acid and hydrogen peroxide and reacting, washing and placing in aqueous solution of graphene oxide, heating mixture, and cooling.

ZHUO Q, ZHANG Y

Growing patterned graphene on electrode surface by placing substrate with electrode in carbon source, irradiating surface of electrode with laser light and growing graphene film layer on electrode surface at irradiation site.

CHEN G, GUO T, CHEN H, HU H, YE Y

Preparing graphene nanobelt comprises e.g. polishing the silicon carbide substrate wafer, pre-processing the substrate, pre-processing includes chemical cleaning, etching and removing hydrogen oxide, and using silicon carbide substrate.

LI B, LIU X, YUAN Z

Manufacturing method for nano structure antireflection film, involves forming antireflection film using graphene as growth substrate, after forming hexagonal graphene honeycomb lattice on silicon dioxide layer.

ZHA G

Method for growing graphene on hexagonal silicon carbide silicon surface used in preparation of graphene single crystal, involves polishing hexagonal silicon carbide wafer, etching wafer, depositing metal substrate and growing graphene.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X