国家/地区 欧洲专利局（EPO）（13）
IPC部 C（13）
IPC大类 C01（13） H01（10） C30（8）
B82（7） C23（5） B32（2）
IPC小类 C01B（13） H01L（9） C30B（8）
B82Y（7） C23C（5） B82B（3）
B32B（2） H01B（2）
IPC C01B032/188（13）
发明人 FOURNEL F（2） FUGIER P（2） GOLANSKI L（2）
RODRIGUEZ G（2） VEERASAMY V（2） VEERASAMY V S（2）
公开年 2011（3） 2015（3） 2018（3）
申请年 2017（4）  2009（2）  2011（2）  2015（2） 
专利权人 COMMISSARIAT.（2） GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Substrate used to produce graphene film, comprises stack of self-supporting base, electrically insulating layer and catalyst layer with self-supporting base having basic monocrystalline area, in succession and superimposed on each other.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Producing graphene film used in e.g. biological sensors involves forming graphene film by epitaxial deposition in contact with platinum-containing monocrystalline zone of substrate catalyst layer using chemical vapor deposition device.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Production of graphene used in manufacture of semiconductor devices, involves providing substrate of silicon carbide, applying polymer layer and/or sorbate onto substrate, and applying polymer layer and/or sorbate onto heated substrate.

KRUSKOPF M, PIERZ, PIERZ K

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A