国家/地区 中国（15）
IPC部 C（15）
IPC大类 C23（15） H01（5） G01（3）
C01（2） G02（2）
IPC小类 C23C（15）
IPC C23C014/08（15）
发明人 CHEN Y（2） LI J（2） ZHANG C（2）
公开年 2021（10） 2022（5）
申请年 2021（15）
专利权人

Functional coating material for e.g. fuel cell, comprises corrosion resistant layer, hydrophobic layer, and conductive part exposed from hydrophobic layer.

FU Y, WEI K, HAN Z

Diode for semiconductors, has heterojunction device with vertical structure, which is indium tin oxide substrate, gallium oxide film, graphene film and aluminum electrode layer, from bottom to top.

XIANG J, JIA M, HAN T, TANG L

Method for manufacturing energy-saving door and window used for a building, involves cleaning and drying the glass body, coating the heat-insulating paint on the glass body to form a heat-insulating coating, adhering the light-adjusting film and hot-pressing onto the heat-insulating coating.

ZHANG C, LIU H

Preparing flexible strain sensor useful e.g. in carbon dioxide sensor, comprises e.g. preparing thin film insulating layer on flexible substrate, performing annealing process, and forming multilayer graphene between flexible substrate and catalytic metal layer.

WANG X, YU G, WANG G, LUO G, LI J, LI X

Preparing graphene composite material based on Tesla valve, by orderly introducing aluminum oxide powder from reverse of tesla valve pipe, silicon dioxide powder, and preparing matrix material by physical vapor deposition.

LI J, XIE Y, HOU Y, XIE G, YANG B

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Double-layer coating modified lithium ion battery anode material powder comprises anode material substrate, first coating layer covered on surface of anode material substrate and second coating layer covered on surface of first layer coating layer.

FEI Z, CHEN Y

Graphene-modified silicon integrated energy storage film has graphene layer that is arranged on surface of silicon substrate, and energy storage film layer that is arranged on surface of graphene layer.

LIU M, JIN L

Method for preparing manganese-doped zinc oxide dilute magnetic semiconductor thin film, involves controlling direct current (DC) magnetron sputtering device, coating substrate, and cooling to room temperature to obtain manganese-doped zinc oxide diluted magnetic semiconductor film.

LIU F, WU P, HONG B, ZHAO W

Vanadium pentoxide heat-sensitive film with sandwich structure used for silicon-based semiconductor, comprises substrate layer, buffer layer, and heat-sensitive layer including vanadium pentoxide layers and carrier concentration increasing layer located between adjacent vanadium pentoxide layers.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S