国家/地区 美国（7） 中国（5） 世界知识产权组织（5） 欧洲专利局（EPO）（3） 韩国（3） 台湾（3） 日本（2）
IPC部 B（9）
IPC大类 C23（9）
IPC小类 C23C（9） C01B（5） B82Y（4）
H01L（4） B05D（3） B32B（3）
C30B（2）
IPC C23C014/48（9）
发明人 VEERASAMY V（2） VEERASAMY V S（2） ZHANG Y（2）
公开年 2010（2） 2012（2）
申请年 2012（3）  2009（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND.（2）

Preparing aluminum-based powder core wire useful for boiler water cooling wall arc spraying comprises taking pure aluminum strip as outer skin of wire material, rolling into U shape, adding nickel, chromium, iron boride, titanium diboride and graphene powder into U-shaped groove and drawing mold.

LU X, SONG X, XIAO H, ZHANG Y

High-heat radiation thin film for use as heat radiation material for e.g. electronic device, comprises carbon layer arranged on metallic board, where thickness of metallic board is specific value and carbon layer is made up of graphene.

MIN E H, CHO S H, CHOI B K, HONG M E, HO C S, KEUN C B, CHO S

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Forming graphene material on surface by implanting carbon into metal material layer disposed on substrate so that graphene forms on top and bottom surfaces of the layer, removing the graphene on the top, and then removing the layer.

KUB F J, ANDERSON T, FEYGELSON B N

Preparation of graphene nanobelt for microelectronic devices, involves injecting silicon ions into silicon carbide, pyrolyzing to form carbon film, depositing nickel film on substrate, placing carbon film on nickel film, and annealing.

GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F, ZHAO Y

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Creating layers of graphene, comprises implanting carbon atoms into a substrate at first temperature and lowering temperature of the substrate, so that the carbon atoms diffuse from substrate.

RAMAPPA D A, SULLIVAN P, RAMAPPA D

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C