国家/地区 美国（9） 世界知识产权组织（5） 中国（4） 韩国（3）
IPC部 C（17）
IPC大类 C23（17） H01（11） C01（7）
B82（5） B01（2）
IPC小类 C23C（17） H01L（10） C01B（7）
B82Y（5） B01J（2） H01G（2）
IPC C23C016/02（17）
发明人 ELSAYED K A M（2） MAAROUF A A（2）
公开年 2023（17）
申请年 2022（17）
专利权人 SAMSUNG ELEC.（2） UNIV IMAM AB.（2）

Forming graphene involves pretreating surface for processing using one or more pretreating flowrates of substrate gas scavenging gas composition or annealing gas composition, in presence of one or more pretreating temperatures, to produce contaminant-depleted surface.

PHILPOTT R, BARAKET M, SHERRILL V

Plasma deposition of material onto two dimensional layer of first substrate, involves depositing protective layer directly onto dimensional layer by pulsed plasma deposition process, and depositing second layer onto protective layer by second plasma deposition process.

RIAZIMEHR S, KNOOPS H, SUNDARAM R

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Depositing nanoscale-thin film in preselected area on substrate for area-selective atomic layer deposition based on electron beam patterning of chemical functional groups, involves depositing layer of functionalizing molecule onto or adjacent to first surface of substrate.

YOUNG M J, MASCHMANN M R

Preparing gallium nitride nanowire/graphene composite material useful in sterilizing device, comprises providing substrate, forming layer of gold film on positive and negative surfaces of substrate, growing gallium nitride nanowire on substrate covered with gold film, and depositing graphene film.

LI J, FU Y, DAI Y, LIN C, WANG Z, LIN L, YANG Y, HU Y, XU Z, FU Z

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Depositing nano-graphene comprises flowing hydrocarbon precursors into reaction chamber to adsorb onto metal layer of substrate at specific temperature, where metal layer interacts with adsorbed hydrocarbon precursor.

SHARMA K, VARADARAJAN B N

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N