国家/地区 日本（10）
IPC部 C（10）
IPC大类 C23（10） H01（10） C01（9）
B32（4） B82（4） H05（3）
IPC小类 C23C（10） C01B（9） H01L（8）
B32B（4） B82Y（4） H01B（3）
H05K（2）
IPC C23C016/26（10）
发明人
公开年 2012（5） 2013（5）
申请年 2012（10）
专利权人 TOSHIBA KK（2）

Formation of graphene film used for e.g. electronic device, involves performing reduction process by heating metal film in atmosphere containing hydrogen gas, carrying out graphene film growth process, and cooling.

YOSHII S, NOZAWA K, MATSUKAWA N

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F

Manufacturing method of semiconductor device, involves forming graphene layer on catalyst layer after planarizing exposed surface of catalyst layer by oxidation-treating.

YAMAZAKI Y, KATAGIRI M, SAKAI T, SAKUMA H, KITAMURA M, SAKATA A, WADA M, KAJITA A, MIZUSHIMA I, SAKUMA N

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Conductive material useful in an electric device, comprises a carbon substance comprising a graphene (a single-layered graphene or a multilayered graphene), and a metallic substance mixed with and/or laminated to the carbon substance.

NAITO K, YOSHINAGA N, NAKANO Y, AKASAKA Y, MATAKE S, AKITA M, MATEKE S

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Electronic device e.g. transistor, has insulating layer having space, formed on substrate, and graphene crosslinked between pair of electrodes formed on both sides of space, through space top.

SATO S

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B

Silicon carbide single crystal substrate for semiconductor element e.g. MOSFET, has graphene layer that is arranged between silicon carbide layer and support substrate.

OKINO K