国家/地区 中国（23） 世界知识产权组织（13） 美国（11） 台湾（8） 韩国（7） 日本（5） 欧洲专利局（EPO）（4） 英国（2）
IPC部 C（46）
IPC大类 C23（46）
IPC小类 C23C（46） H01L（23） C01B（21）
H01M（8） B22F（7） C22C（7）
H01B（5） H01H（5） H01J（5）
C30B（4） B32B（3） H05H（3）
B82Y（2） C10L（2） C22F（2）
IPC C23C016/26（46）
发明人 MA Y（6） SHEN H（6） CAO H（4）
MATSUMOTO T（4） QIAN T（4） WADA M（4）
BYUN K（3） IFUKU R（3） LEE E（3）
LI Y（3） LV X（3） SHIN H（3）
SHIN K（3） ZHANG W（3） BYUN K E（2）
公开年 2022（46）
申请年 2021（21）  2022（20）  2020（5） 
专利权人 SHANGHAI XIN.（6） ZHEJIANG CHI.（6） TOKYO ELECTR.（5） SAMSUNG ELEC.（4）
APPLIED MATE.（3） DAEJOO ELECT.（2） PARAGRAF LTD（2） SONGAM SYSCO.（2）

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Preparing metal-based graphene composite material, comprises mixing graphene slurry and metal powder to form mixed slurry, and forming mixed slurry into metal-based graphene composite material by chemical vapor deposition in oxygen-free environment.

QIAN T, CAO H, SHEN H, LV X, MA Y

Titanium carbide-yttrium oxide composite reinforced graphene-coated copper-based contact material comprises titanium carbide, yttrium oxide, tungsten, chromium, molybdenum, and graphene-coated copper.

LIU J, ZHANG Y, CHEN H, YU X, TAO Y, WANG J

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Performing graphene copper composite material useful in transmission cable comprises performing chemical vapor deposition on copper powder under methane and reducing atmosphere to form graphene on surface of the copper powder hot-pressing and sintering first powder.

CHEN S, LIU J, CHI C, GAO J, PANG Z, ZHANG Q, CHEN B, HAN Y, ZHU Z, DING Y

Processing substrates by providing semiconductor substrate, which comprises metal layer formed in dielectric layer and barrier layer between metal layer and dielectric layer, depositing graphene on exposed metal surface, depositing inhibitor layer and depositing dielectric material.

HAUSMANN D M, RAMNANI P G, SHARMA K, LEMAIRE P C, MAHOROWALA A P

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S