国家/地区 中国（13） 美国（2） 世界知识产权组织（2）
IPC部 C（14） H（4） B（2）
IPC大类 C23（14）
IPC小类 C23C（14） C30B（7） C01B（4）
H01L（3）
IPC C23C016/26（14）
发明人 HAO Y（7） WANG D（7） ZHANG J（7）
ZHANG Y（7） LEI T（6） DENG P（5）
GUO H（5） NING J（5） ZHANG K（5）
CHAI Z（3） HAN D（3） LV J（3）
YAN Y（3）
公开年 2012（6） 2013（3）
申请年 2012（8）  2020（2） 
专利权人 UNIV XIDIAN（14）

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

Preparation of micro super capacitor used for manufacturing large integrated circuit, involves pretreating catalytic metal, preparing graphene, designing photomasking mask plate, preparing graphene microelectrode, and adding gel electrolyte.

NING J, FENG X, WANG D, ZHANG J, MU M, HAO Y

Graphene-based phase modulator has substrate layer, metal layer and sandwich structure that includes lower confinement layer, graphene layer and upper confinement layer that are arranged in order from bottom to top.

WANG S, ZHANG Q, HU Z, CAI M, DU L, ZHANG H, CHEN Y, ZHOU Z

Growing method of aluminum nitride layer and gallium nitride layer on graphene by magnetic sputtering involves supplying hydrogen to quartz tube furnace containing clean copper tube, cooling and obtaining graphene.

CHEN Z, HAO Y, ZHANG J, LV J

Preparing graphene catalyst based copper nano wires used for manufacturing semiconductor devices, involves carrying out flattening process of high-purity aluminum sheet and oxidizing aluminum sheet.

HAO Y, LU X, WANG D, ZHANG J

Method for laser-assisted lossless transfer of chemical vapor deposition graphene, involves growing gallium nitride and copper layers on sapphire substrate in sequence, depositing graphene on copper layer in chemical vapor deposition mode.

HAO Y, NING J, HAN D, YAN Y, WANG D, ZHANG J, CHAI Z

Annealing sapphire substrate used for transfer of graphene, by introducing hydrogen, argon and methane gases into copper foil, soaking in ferric pernitrate and acetone, and rinsing with ethanol and deionized water, passing into argon gas.

WANG D, CHAI Z, NING J, ZHANG J, HAN D, HAO Y, YAN Y

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y