国家/地区 中国（71）
IPC部 C（71）
IPC大类 C01（71）
IPC小类 C01B（71）
IPC C23C016/26（71）
发明人 LI Y（6） LEE E（5） FAN F Y（4）
FAN S（4） JIANG K（4） LIN X（4）
SHIN H（4） SHIN H J（4） XIAO L（4）
BYUN K（3） BYUN K E（3） GUO S（3）
HONG B（3） KIM C（3） KIM S（3）
公开年 2012（12） 2021（10） 2015（9） 2016（6） 2017（6） 2013（5） 2014（5） 2023（5） 2020（4） 2022（4） 2011（3）
申请年 2013（9）  2011（8）  2016（8）  2022（8）  2014（7）  2020（7）  2015（6）  2012（5）  2021（5）  2019（3）  2010（2） 
专利权人 SAMSUNG ELEC.（8） HON HAI PREC.（4） HONGFUJIN PR.（4） UNIV CALIFOR.（4）
UNIV TSINGHU.（4） UNIV SINGAPO.（3） UNIV SUNGKYU.（3） BASF SE（2）
CALIFORNIA I.（2） CORNING INC（2） EMPIRE TECHN.（2） GRAPHENE SQU.（2）
GUO S（2） ISLAND GIANT.（2） LAM RES CORP（2） MAX PLANCK G.（2）
OZKAN C S（2） OZKAN M（2） SHENZHEN CHI.（2） UNIV SUNGKYU.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Method for preparing graphene metal composite material useful in field of alloy preparation for electrical, mechanical, and thermodynamic applications, comprises e.g. growing graphene on surface of metal material, heating, and applying pressure to metal material grown with graphene.

QU Y, TAN H, WANG W, SHEN D

Preparing graphene copper composite material useful in supercapacitors and motor drive devices, comprises e.g. pre-setting multi-layer copper foil in hot pressing chamber, adopting chemical vapor deposition, preparing graphene film on copper foil surface, and sintering graphene-copper.

GONG M, ZHAO M, LI M, CHEN C, CHEN Q, YANG W, LI Y, WANG Y, LIU B, PEI Z, ZHANG X, LIANG J

Preparation method of copper-based graphene, involves removing copper-based graphene precursor from impurities by solvent separation method, and drying copper-based graphene precursor to form copper-based graphene finished product.

WU G, QIAN T, CAO H, MA Y, SHEN H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X