国家/地区 美国（17）
IPC部 C（17）
IPC大类 C23（17）
IPC小类 C23C（17） C01B（11） B82Y（10）
H01L（10） B05D（5） B32B（5）
B01J（3） B82B（3） H01B（3）
C03C（2）
IPC C23C016/26（17）
发明人 BAE S K（2） CHUNG H（2） CHUNG H J（2）
HEO J（2） HEO J S（2） HUH J（2）
HUH J S（2） JUNG H（2） JUNG H J（2）
KANG S（2） KANG S R（2） SEO D（2）
SEO S（2） SEO S A（2） WOO Y（2）
公开年 2011（12） 2012（4）
申请年 2010（17）
专利权人 SAMSUNG ELEC.（3） UNIV SUNGKYU.（3） UNIV SUNGKYU.（2）

Formation of graphene-based device used in electronic field, involves depositing carbon on substrate having dielectric material, annealing carbon-deposited substrate, and forming ordered graphene on dielectric material.

KELBER J A, GADDAM S S, BJELKEVIG C L

Nanosheet used in applications e.g. superconductors, capacitors comprises silicon carbide layer having first and second surfaces; a first graphene layer formed of specific graphenes; and a second graphene layer formed of specific graphenes.

CHEN K, HU M, KUO C, CHEN L, CHEN K H, HU M S, KUO C C, CHEN L C

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Creating regions within a chamber partially confined by surfaces of a solid substrate and containing a carbon-containing gas e.g. methane for producing graphene, comprises causing dissociation of carbon atoms from the gas molecules.

LIN J T

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Graphene roll-to-roll coating apparatus useful for graphene roll-to-roll coating, and for coating a metallic member, comprises a first roller, a pre-treating unit, a graphene forming unit, and a second roller.

BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, YAN J K

Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate, adsorbing the graphene source to form an adsorbed layer on the substrate, and activating the adsorbed layer by heating the adsorbed layer.

AHN S, KANG S Y

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Synthesizing graphene films, by loading metal and/or dielectric on substrate into tube furnace and/or cold wall chamber, introducing hydrogen gas into tube furnace and/or cold wall chamber, and heating metal and/or dielectric on substrate.

COLOMBO L, LI X, RUOFF R S